RB168L100DD
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
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RB168L100DD
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR 100 V Io 1 A IFSM 50 A
●Features High reliability Small power mold type Super low IR
●Inner Circuit
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm) Quantity(pcs)
12 1500
Silicon epitaxial planar
Taping Code
TE25
Marking
6A
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage Reverse voltage
Average rectified forward current
VRM VR
Io
Duty≦0.5
Reverse direct voltage
Glass epoxy mounted、 60Hz half sin waveform、resistive load、
Tc=125℃ Max.
100 100
1
V V
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃
50
A
Junction temperature Storage temperature
Tj Tstg -
150 -55 ~ 150
℃ ℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Forward voltage
VF IF=1A
Reverse current
IR VR=100V
Min. Typ. Max. Unit - - 0.81 V - - 0.4 μA
Attention
www.rohm.com © 2016- ROHMCo., Ltd.All rights reserved.
1/5
2019/05/28_Rev.002
RB168L100DD
●Characteristic Curves
Data sheet
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