Digital Transistors. DTD123YKFRA Datasheet

DTD123YKFRA Transistors. Datasheet pdf. Equivalent

Part DTD123YKFRA
Description Digital Transistors
Feature DTD123YK FRA 500mA/50V Digital transistor (built-in resistors) Datasheet AEC-Q101 Qualified Param.
Manufacture ROHM
Datasheet
Download DTD123YKFRA Datasheet



DTD123YKFRA
DTD123YK FRA
500mA/50V Digital transistor (built-in resistors)
Datasheet
AEC-Q101 Qualified
Parameter
VCC
IC
R1
R2
Value
50V
500mA
2.2kΩ
10kΩ
lFeatures
1) Built-In Biasing Resistors,
 R1 = 2.2kΩ, R2 = 4.7kΩ
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary PNP Types: DTB123YK FRA
lOutline
SOT-346
 
SC-59
 
 
 
(SMT3)
              
lInner circuit
 
 
lApplication
INVERTER, INTERFACE, DRIVER
lPackaging specifications
Part No.
Package
Package
size
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTD123YK FRA SOT-346 2928
T146
180
8
3000
F62
(SMT3)
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
20160725 - Rev.001



DTD123YKFRA
DTD123YK FRA
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCC
VIN
IC*1
PD*2
Tj
Tstg
Values
50
-5 to 12
500
200
150
-55 to +150
Unit
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI*3
R1
R2/R1
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
IO = 50mA, II = 2.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 50mA
-
-
Values
Min. Typ. Max.
- - 0.3
2.0 -
-
- 100 300
- - 3.6
- - 500
56 -
-
1.54 2.2 2.86
3.6 4.5 5.5
Unit
V
mV
mA
nA
-
-
Transition frequency
f
*1
T
VCE = 10V, IE = -50mA,
f = 100MHz
-
200
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 Pulsed
                                            
 
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
                                        
20160725 - Rev.001





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