Document
DTA143T series
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter
Value
VCEO
-50V
IC -100mA
R1 4.7kΩ
lFeatures
1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC143T series
lOutline
SOT-723
DTA143TM (VMT3)
SOT-416
DTA143TE (EMT3)
SOT-323
SOT-416FL
DTA143TEB (EMT3F)
SOT-323FL
DTA143TUB (UMT3F)
SOT-346
lApplication INVERTER, INTERFACE,DRIVER lInner circuit DTA143TM/ DTA143TEB/ DTA143TUB
DTA143TU3 (UMT3)
DTA143TKA (SMT3)
DTA143TE/ DTA143TU3/ DTA143TKA
lPackaging specifications
Part No.
Package
Package size
Taping code
Reel size Tape width (mm) (mm)
Basic ordering unit.(pcs)
Marking
DTA143TM SOT-723
1212
T2L
180
8
8000
93
DTA143TEB SOT-416FL 1616
TL
180
8
3000
93
DTA143TE SOT-416
1616
TL
180
8
3000
93
DTA143TUB SOT-323FL 2021
TL
180
8
3000
93
DTA143TU3 SOT-323
2021 T106
180
8
3000
93
DTA143TKA SOT-346
2928 T146
180
8
3000
93
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1/9
20180419 - Rev.002
DTA143T series
lAbsolute maximum ratings (Ta = 25°C) Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA143TM
DTA143TEB
Power dissipation
DTA143TE DTA143TUB
DTA143TU3
DTA143TKA
Junction temperature
Range of storage temperature
Datasheet
Symbol VCBO VCEO VEBO IC
PD*1
Tj Tstg
Values -50 -50 -5 -100 150 150 150 200 200 200 150
-55 to +150
Unit V V V mA
mW
℃ ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown voltage
BVCBO IC = -50μA
Collector-emitter breakdown voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Collector-emitter saturation voltage
DC current gain Input resistance
BVEBO ICBO IEBO VCE(sat) hFE R1
IE = -50μA VCB = -50V VEB = -4V
IC = -5mA, IB = -0.25mA
VCE = -5V, IC = -1mA -
Transition frequency
f
*2 T
VCE = -10V, IE = 5mA, f = 100MHz
*1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor
Values Unit
Min. Typ. Max.
-50 - - V
-50 - - V
-5 - - V - - -500 nA - - -500 nA - - -300 mV 100 250 600 3.29 4.7 6.11 kΩ
- 250 - MHz
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2/9
20180419 - Rev.002
DTA143T series
lElectrical characteristic curves(Ta=25℃)
Fig.1 Grounded emitter propagation characteristics
Datasheet
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs. Collector Current
www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved.
3/9
20180419 - Rev.002
DTA143T series lDimensions
Datasheet
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4/9
20180419 - Rev.002
DTA143T series lDimensions
Datasheet
www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved.
5/9
20180419 - Rev.002
DTA143T series lDimensions
Datasheet
www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved.
6/9
20180419 - Rev.002
DTA143T series lDimensions
Datasheet
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7/9
20180419 - Rev.002
DTA143T series lDimensions
Datasheet
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