Digital transistor. DTA143TU3 Datasheet

DTA143TU3 transistor. Datasheet pdf. Equivalent

Part DTA143TU3
Description PNP Digital transistor
Feature DTA143T series PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet Pa.
Manufacture ROHM
Datasheet
Download DTA143TU3 Datasheet



DTA143TU3
DTA143T series
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter
Value
VCEO
-50V
IC -100mA
R1 4.7kΩ
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary NPN Types: DTC143T series
lOutline
SOT-723
 
DTA143TM
(VMT3)
SOT-416
 
DTA143TE
(EMT3)
SOT-323
SOT-416FL
 
DTA143TEB
(EMT3F)
SOT-323FL
 
DTA143TUB
(UMT3F)
SOT-346
lApplication
INVERTER, INTERFACE,DRIVER
lInner circuit
DTA143TM/ DTA143TEB/ DTA143TUB
 
DTA143TU3
(UMT3)
 
DTA143TKA
(SMT3)
DTA143TE/ DTA143TU3/ DTA143TKA
lPackaging specifications
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTA143TM SOT-723
1212
T2L
180
8
8000
93
DTA143TEB SOT-416FL 1616
TL
180
8
3000
93
DTA143TE SOT-416
1616
TL
180
8
3000
93
DTA143TUB SOT-323FL 2021
TL
180
8
3000
93
DTA143TU3 SOT-323
2021 T106
180
8
3000
93
DTA143TKA SOT-346
2928 T146
180
8
3000
93
                                                                                        
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© 2018 ROHM Co., Ltd. All rights reserved.
1/9
20180419 - Rev.002



DTA143TU3
DTA143T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA143TM
DTA143TEB
Power dissipation
DTA143TE
DTA143TUB
DTA143TU3
DTA143TKA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-50
-50
-5
-100
150
150
150
200
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.25mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*2
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 - - V
-50 - - V
-5 - - V
- - -500 nA
- - -500 nA
- - -300 mV
100 250 600 -
3.29 4.7 6.11 kΩ
- 250 - MHz
                                            
 
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© 2018 ROHM Co., Ltd. All rights reserved.
2/9
                                        
20180419 - Rev.002





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