2SCR372PFRA

2SCR372P FRA Middle Power Transistor(120V/0.7A) Parameter VCEO IC Value 120V 0.7A lFeatures Low saturation voltage 　VCE(sat)=300mV(Max.) 　(IC/IB=500mA/50mA) lOutline 　 SOT-89 　 SC-62 MPT3 lInner circuit Datasheet AEC-Q101 Qualified 　 　 　 　 　 lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SCR372P FRA SOT-89 (MPT3) Package size Taping code Reel size Tape width Quantity (mm) (mm) (pcs) Marking 4540 T100 180 12 1000 GX 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/6 20190527 - Rev.002 2SCR372P / lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation 2SCR372P Junction temperature Range of storage temperature 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC PD PD PD Tj Tstg Values 120 120 6 0.7 150 -55 to +150 Unit V V V A ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC = 100μA Collector-emitter breakdown voltage BVCEO IC = 1mA Emitter-base breakdown voltage BVEBO IE = 100μA Collector cut-off current ICBO VCB = 100V Emitter cut-off current IEBO VEB = 4V Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA DC current gain hFE VCE = 5V, IC = 100mA Transition frequency fT VCE = 5V, IE = -300mA, f = 100MHz Output capacitance Cob VCB =...