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AONS21357 Dataheets PDF



Part Number AONS21357
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Datasheet AONS21357 DatasheetAONS21357 Datasheet (PDF)

General Description • Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in load switch • Battery protection charge/discharge Top View DFN5X6 Bottom View AONS21357 30V P-Channel MOSFET Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -36A < 7.8mΩ < 12.3mΩ D PIN1 Orderable Part Number AONS21357 PIN1 Package Type DFN 5x6 Form Tape & Reel.

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General Description • Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in load switch • Battery protection charge/discharge Top View DFN5X6 Bottom View AONS21357 30V P-Channel MOSFET Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -36A < 7.8mΩ < 12.3mΩ D PIN1 Orderable Part Number AONS21357 PIN1 Package Type DFN 5x6 Form Tape & Reel G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -36 -36 -144 -21 -17 39 76 48 19 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 20 45 2.1 Max 25 55 2.6 Units °C/W °C/W °C/W Rev.2.0: February 2020 www.aosmd.com Page 1 of 6 AONS21357 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±25V VDS=VGS, ID=-250mA VGS=-10V, ID=-20A Static Drain-Source On-Resistance Forward Transconductance VGS=-4.5V, ID=-20A VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=-10V, VDS=-15V, ID=-20A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=0.75W, RGEN=3W Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-20A, di/dt=500A/ms Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/ms Min -30 -1.3 Typ -1.7 6.3 8.6 9.8 50 -0.7 2830 430 365 14 50 25 9 12 12.5 18 125 66 32 62 Max Units -1 -5 ±100 -2.3 7.8 10.7 12.3 -1 -36 V μA nA V mΩ mΩ S V A pF pF pF 28 Ω 70 nC 35 nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: February 2020 www.aosmd.com Page 2 of 6 AONS21357 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 -10V 80 60 40 -4.5V -4V -3.5V -ID (A) 100 VDS=-5V 80 60 125°C 40 -ID (A) 20 VGS=-3V 0 012345 -VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 20 25°C 0 12345 -VGS (Volts) Figure 2: Transfer Characteristics (Note E) 1.6 Normalized On-Resistance RDS(ON) (mW) 15 VGS=-4.5V 10 5 VGS=-10V 1.4 VGS=-10V ID=-20A 1.2 1 VGS=-4.5V ID=-20A 0 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 ID=-20A 20 15 125°C 10 5 25°C -IS (A) 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 1.0E+00 1.0E-01 1.


BU7244YFV-C AONS21357 AOSP21357


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