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General Description
• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant
Applications
• Notebook AC-in load switch • Battery protection charge/discharge
Top View
DFN5X6 Bottom View
AONS21357
30V P-Channel MOSFET
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)
100% UIS Tested 100% Rg Tested
-30V -36A < 7.8mΩ < 12.3mΩ
D
PIN1
Orderable Part Number
AONS21357
PIN1
Package Type
DFN 5x6
Form
Tape & Reel
G S
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.1mH
TC=25°C Power Dissipation B TC=100°C
C
VGS ID
IDM IDSM
IAS EAS PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±25 -36 -36 -144 -21 -17 39 76 48 19 5.0 3.2
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 20 45 2.1
Max 25 55 2.6
Units °C/W °C/W °C/W
Rev.2.0: February 2020
www.aosmd.com
Page 1 of 6
AONS21357
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250mA, VGS=0V VDS=-30V, VGS=0V
IGSS VGS(th)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage
VDS=0V, VGS=±25V VDS=VGS, ID=-250mA VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
Forward Transconductance
VGS=-4.5V, ID=-20A VDS=-5V, ID=-20A
Diode Forward Voltage
IS=-1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=-10V, VDS=-15V, ID=-20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=0.75W, RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-20A, di/dt=500A/ms Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/ms
Min -30
-1.3
Typ
-1.7 6.3 8.6 9.8 50 -0.7
2830 430 365 14
50 25 9 12 12.5 18 125 66 32 62
Max Units
-1 -5 ±100 -2.3 7.8 10.7 12.3
-1 -36
V
μA
nA V
mΩ
mΩ S V A
pF pF pF 28 Ω
70 nC 35 nC
nC nC ns ns ns ns
ns nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: February 2020
www.aosmd.com
Page 2 of 6
AONS21357
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 -10V
80
60
40
-4.5V
-4V
-3.5V
-ID (A)
100 VDS=-5V
80
60
125°C 40
-ID (A)
20
VGS=-3V 0
012345
-VDS (Volts) Figure 1: On-Region Characteristics (Note E)
20
20 25°C
0 12345
-VGS (Volts) Figure 2: Transfer Characteristics (Note E)
1.6
Normalized On-Resistance
RDS(ON) (mW)
15 VGS=-4.5V
10
5 VGS=-10V
1.4
VGS=-10V ID=-20A
1.2
1
VGS=-4.5V ID=-20A
0 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25 ID=-20A
20
15 125°C
10
5 25°C
-IS (A)
0.8 0
25 50 75 100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00 1.0E-01
1.