30V P-Channel MOSFET
AOSP21357
30V P-Channel MOSFET
General Description
• Latest advanced trench technology • Low RDS(ON) • High Current cap...
Description
AOSP21357
30V P-Channel MOSFET
General Description
Latest advanced trench technology Low RDS(ON) High Current capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)
-30V -16A < 8.5mΩ < 13mΩ
Applications
Notebook AC-in load switch Battery protection charge/discharge
100% UIS Tested 100% Rg Tested
SO-8
Top View
D D D D
Bottom View
G
S S S
Top View
S1 S2 S3 G4
8D 7D 6D 5D
Orderable Part Number
AOSP21357
Package Type
SO-8
Form
Tape & Reel
D
G S
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH
TA=25°C Power Dissipation B TA=70°C
C
VGS
ID
IDM IAS EAS
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±25 -16 -12.5 -64 39 76 3.1 2.0
-55 to 150
Units V V
A
A mJ W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Rev.3.0: February 2020
www.aosmd.com
Page 1 of 5
AOSP21357
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250mA, VGS=0V
IDSS Zero Gate Voltage Drain Current La...
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