Power Transistor. AOTF095A60L Datasheet

AOTF095A60L Transistor. Datasheet pdf. Equivalent

Part AOTF095A60L
Description N-Channel Power Transistor
Feature AOTF095A60L/AOT095A60L/AOB095A60L 600V, a MOS5 TM N-Channel Power Transistor General Description • .
Manufacture Alpha & Omega Semiconductors
Total Page 6 Pages
Datasheet
Download AOTF095A60L Datasheet



AOTF095A60L
AOTF095A60L/AOT095A60L/AOB095A60L
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary αMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
Applications
• SMPS with PFC, Flyback and LLC topologies
• Micro inverter with DC/AC inverter topology
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
TO-263
D2PAK
D
700V
152A
< 0.095Ω
78nC
7.8mJ
D
AOT095A60L
S
D
G
AOTF095A60L
GDS
G
AOB095A60L
S
G
S
Orderable Part Number
AOTF095A60L
AOT095A60L
AOB095A60L
Package Type
TO-220F Green
TO-220 Green
TO-263 Green
Form
Tube
Tube
Tape&Reel
Minimum Order Quantity
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT(B)095A60L
AOTF095A60L
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±20
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
±30
38 38*
24 24*
152
11
60
480
100
Diode reverse recovery
dv/dt
20
VDS=0 to 400V,IF<=20A,Tj=25°C
di/dt
500
TC=25°C
Power Dissipation B Derate above 25°C
PD
378
3.0
41
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-55 to 150
300
Units
V
V
V
A
A
mJ
mJ
V/ns
V/ns
A/us
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RqJA
RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT(B)095A60L
65
0.5
0.33
AOTF095A60L
65
--
3
Units
°C/W
°C/W
°C/W
Rev.2.0: January 2020
www.aosmd.com
Page 1 of 6



AOTF095A60L
AOT095A60L/AOTF095A60L/AOB095A60L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=19A
gFS Forward Transconductance
VDS=10V, ID=19A
VSD Diode Forward Voltage
IS=19A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
600
700
V
0.51
V/ oC
3
0.082
25
0.86
1
10
±100
0.095
1.2
38
152
mA
nA
V
Ω
S
V
A
A
DYNAMIC PARAMETERS
Ciss
Coss
Co(er)
Co(tr)
Input Capacitance
Output Capacitance
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
4010
105
90
390
pF
pF
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
1.2 pF
5.5 Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=19A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=19A,
RG=5W
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=19A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
78
28
24
48
50
99
33
444
36
11.5
nC
nC
nC
ns
ns
ns
ns
ns
A
mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4 A, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: January 2020
www.aosmd.com
Page 2 of 6





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