AOB095A60L

AOTF095A60L/AOT095A60L/AOB095A60L 600V, a MOS5 TM N-Channel Power Transistor General Description Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/AC inverter topology 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F TO-263 D2PAK D 700V 152A < 0.095Ω 78nC 7.8mJ D AOT095A60L S D G AOTF095A60L GDS G AOB095A60L S G S Orderable Part Number AOTF095A60L AOT095A60L AOB095A60L Package Type TO-220F Green TO-220 Green TO-263 Green Form Tube Tube Tape&Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)095A60L AOTF095A60L Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness VGS ID IDM IAR EAR EAS dv/dt ±30 38 38* 24 24* 152 11 60 480 100 Diode reverse recovery dv/dt 20 VDS=0 to 400V,IF<=20A,Tj=25°C di/dt 500 TC=25°C Power Dissipation B Derate above 25°C PD 378 3.0 41 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds ...