AOTF095A60L/AOT095A60L/AOB095A60L
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary αMOS5TM ...
AOTF095A60L/AOT095A60L/AOB095A60L
600V, a MOS5 TM N-Channel Power
Transistor
General Description
Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI
performance Enhanced body diode for robustness and fast reverse
recovery
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
Applications
SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/AC inverter topology
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
TO-263 D2PAK
D
700V 152A < 0.095Ω 78nC 7.8mJ
D
AOT095A60L
S D G
AOTF095A60L
GDS
G AOB095A60L
S
G
S
Orderable Part Number
AOTF095A60L AOT095A60L AOB095A60L
Package Type
TO-220F Green TO-220 Green TO-263 Green
Form
Tube Tube Tape&Reel
Minimum Order Quantity
1000 1000 800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT(B)095A60L
AOTF095A60L
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±20
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
VGS
ID
IDM IAR EAR EAS dv/dt
±30 38 38* 24 24*
152 11 60 480 100
Diode reverse recovery
dv/dt
20
VDS=0 to 400V,IF<=20A,Tj=25°C
di/dt
500
TC=25°C Power Dissipation B Derate above 25°C
PD
378 3.0
41 0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
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