Power Transistor. AOK160A60 Datasheet

AOK160A60 Transistor. Datasheet pdf. Equivalent

Part AOK160A60
Description N-Channel Power Transistor
Feature AOK160A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary αMOS5TM tech.
Manufacture Alpha & Omega Semiconductors
Total Page 6 Pages
Datasheet
Download AOK160A60 Datasheet



AOK160A60
AOK160A60
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary αMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
Applications
• SMPS with PFC, Flyback and LLC topologies
• Micro inverter with DC/AC inverter topology
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
Top View
TO-247
700V
96A
< 0.16Ω
46nC
4.9mJ
D
AOK160A60
S
D
G
G
S
Orderable Part Number
AOK160A60
Package Type
TO247
Form
Tube
Minimum Order Quantity
240
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOK160A60
600
±20
±30
24
15
96
6
18
172
100
20
250
2.0
-55 to 150
300
Units
V
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RqJA
RqCS
RqJC
AOK160A60
40
0.5
0.5
Units
°C/W
°C/W
°C/W
Rev.2.0: January 2020
www.aosmd.com
Page 1 of 6



AOK160A60
AOK160A60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=12A
gFS Forward Transconductance
VDS=10V, ID=12A
VSD Diode Forward Voltage
IS=12A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
600
700
V
0.53
V/ oC
3
0.14
20
0.87
1
10
±100
0.16
1.2
24
96
mA
nA
V
Ω
S
V
A
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Co(tr)
Effective output capacitance, time
related I
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
f=1MHz
2340
62
56
233
1.3
5.4
pF
pF
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=12A, RG=5W
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Irm
Peak Reverse Recovery Current
IF=12A, dI/dt=100A/ms, VDS=400V
Qrr Body Diode Reverse Recovery Charge
46
17
14
34
29
63
19
387
30
7.3
nC
nC
nC
ns
ns
ns
ns
ns
A
mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.4A, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: January 2020
www.aosmd.com
Page 2 of 6





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