AOK160A60

AOK160A60 600V, a MOS5 TM N-Channel Power Transistor General Description Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-247 700V 96A < 0.16Ω 46nC 4.9mJ D AOK160A60 S D G G S Orderable Part Number AOK160A60 Package Type TO247 Form Tube Minimum Order Quantity 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 24 15 96 6 18 172 100 20 250 2.0 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC Maximum 40 0.5 0.5 Units °C/W °C/W °C/W Rev.3.1: Janua...