N-Channel MOSFET. AOCA32108E Datasheet

AOCA32108E MOSFET. Datasheet pdf. Equivalent

Part AOCA32108E
Description Dual N-Channel MOSFET
Feature AOCA32108E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technol.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOCA32108E Datasheet



AOCA32108E
AOCA32108E
12V Common-Drain Dual N-Channel MOSFET
General Description
• Trench Power MOSFET technology
• Ultra low RSS(ON)
• With ESD protection to improve battery performance and safety
• Common drain configuration for design simplicity
• RoHS and Halogen-Free Compliant
Applications
• Battery protection switch
• Mobile device battery charging and discharging
Product Summary
VSS
RSS(ON) (at VGS=4.5V)
RSS(ON) (at VGS=3.8V)
RSS(ON) (at VGS=3.1V)
RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 3.8mΩ
< 4mΩ
< 4.6mΩ
< 5.6mΩ
HBM Class 2
AlphaDFN 3.01x1.52B_10
Top View
Bottom View
Pin1
Orderable Part Number
AOCA32108E
Top View
4
6
3
10
9
2
5
8
G1
17
Pin1 1, 2, 7, 8: Source(FET1)
5: Gate(FET1)
Package Type
AlphaDFN 3.01x1.52B_10
3, 4, 9, 10: Source(FET2)
6: Gate(FET2)
Form
Tape & Reel
D1 D2
G2
S1 S2
Minimum Order Quantity
8000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Source-Source Voltage
VSS
Gate-Source Voltage
Source Current(DC) Note1
Source Current(Pulse) Note2
Power Dissipation Note1
TA=25°C
TA=25°C
VGS
IS
ISM
PD
Junction and Storage Temperature Range
TJ, TSTG
Rating
12
±8
25
140
3.1
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
t ≤ 10s
Steady-State
RqJA
Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.
Note 2. PW <10 μs pulses, duty cycle 1% max.
Typical
30
40
Units
°C/W
°C/W
Rev.1.1: March 2020
www.aosmd.com
Page 1 of 5



AOCA32108E
AOCA32108E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVSSS Source-Source Breakdown Voltage
IS=250mA, VGS=0V Test Circuit 6
12
V
ISSS
Zero Gate Voltage Source Current
VSS=12V, VGS=0V
Test Circuit 1
TJ=55°C
IGSS Gate leakage current
VSS=0V, VGS=±8V Test Circuit 2
1 μA
5
±10 μA
VGS(th) Gate Threshold Voltage
VSS=VGS, IS=250mA Test Circuit 3 0.4 0.7 1.1
V
VGS=4.5V, IS=5A Test Circuit 4 2.1 2.95 3.8 mΩ
TJ=125°C 2.7 3.85 5.0
RSS(ON) Static Source to Source On-Resistance VGS=3.8V, IS=5A Test Circuit 4 2.3 3.10 4.0
VGS=3.1V, IS=5A Test Circuit 4 2.4 3.40 4.6
VGS=2.5V, IS=5A Test Circuit 4 2.8 3.90 5.6
gFS Forward Transconductance
VSS=5V, IS=5A
Test Circuit 3
40
S
VFSS
Forward Source to Source Voltage
IS=1A,VGS=0V
Test Circuit 5
0.6 1 V
DYNAMIC PARAMETERS
Rg Gate resistance
f=1MHz
1.1
SWITCHING PARAMETERS
Qg Total Gate Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
VG1S1=4.5V, VSS=6V, IS=5A
VG1S1=4.5V, VSS=6V, RL=1.2W,
RGEN=3W
Test Circuit8
32
1.3
3
1.7
9
nC
μs
μs
μs
μs
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.1: March 2020
www.aosmd.com
Page 2 of 5





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