AOI280A60

AOD280A60/AOI280A60 600V, a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 56A < 0.28Ω 23.5nC 3.1mJ TO252 DPAK TO-251A IPAK D Top View Bottom View Top View Bottom View D D D D D D S G S AOD280A60 Orderable Part Number AOD280A60 AOI280A60 G G DS S DG AOI280A60 Package Type TO-252 TO251A Form Tape&Reel Tube G S Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 14 9 56 3.6 6.5 60 100 20 138 1.1 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Jun...