Power Transistor. AOI280A60 Datasheet

AOI280A60 Transistor. Datasheet pdf. Equivalent

Part AOI280A60
Description N-Channel Power Transistor
Feature AOD280A60/AOI280A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aM.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOI280A60 Datasheet



AOI280A60
AOD280A60/AOI280A60
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
Applications
• SMPS with PFC, Flyback and LLC topologies
• Micro inverter with DC/AC inverter topology
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
56A
< 0.28Ω
23.5nC
3.1mJ
TO252
DPAK
Top View
D
Bottom View
D
TO-251A
IPAK
Top View
D
Bottom View
D
D
DS
G
AOD280A60
DG
S
G DS
AOI280A60
S DG
G
S
Orderable Part Number
AOD280A60
AOI280A60
Package Type
TO-252
TO251A
Form
Tape&Reel
Tube
Minimum Order Quantity
2500
3500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
600
±20
14
9
56
3.6
6.5
60
100
20
138
1.1
-55 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RqJA
RqCS
RqJC
Typical
45
--
0.7
Maximum
55
0.5
0.9
Units
°C/W
°C/W
°C/W
Rev.2.1: January 2020
www.aosmd.com
Page 1 of 6



AOI280A60
AOD280A60/AOI280A60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A
gFS Forward Transconductance
VDS=10V, ID=7A
VSD Diode Forward Voltage
IS=7A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
600
700
V
0.46
V/ oC
1
mA
10
±100 nA
3V
0.25 0.28
Ω
11 S
0.86 1.2
V
14 A
56 A
DYNAMIC PARAMETERS
Ciss
Coss
Co(er)
Co(tr)
Input Capacitance
Output Capacitance
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
1350
38
35
140
pF
pF
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
1 pF
5.3 Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=7A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=7A,
RG=5W
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=7A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
23.5
nC
9 nC
5.5 nC
25 ns
15 ns
44 ns
10 ns
280 ns
23 A
3.8 mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=1.4 A,RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.1:January 2020
www.aosmd.com
Page 2 of 6





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