Power Transistor. AOK125A60 Datasheet

AOK125A60 Transistor. Datasheet pdf. Equivalent

Part AOK125A60
Description N-Channel Power Transistor
Feature AOK125A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM tech.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOK125A60 Datasheet



AOK125A60
AOK125A60
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast
reverse recovery
Applications
• SMPS with PFC,Flyback and LLC topologies
• Micro inverter with DC/AC inverter topology
Top View
TO-247
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
100A
< 0.125Ω
39nC
6.3mJ
D
AOK125A60
S
D
G
Orderable Part Number
AOK125A60
Package Type
TO247
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Diode reverse recovery
VDS=0 to 400V,IF<=20A,Tj=25°C
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
dv/dt
di/dt
Power Dissipation B
TC=25°C
Derate above 25°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering purpose,
1/8" from case for 5 seconds
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RqJA
RqCS
RqJC
G
Form
Tube
S
Minimum Order Quantity
240
Maximum
600
±20
±30
28
18
100
14
98
555
100
20
500
357
2.9
-55 to 150
300
Units
V
V
V
A
A
mJ
mJ
V/ns
V/ns
A/us
W
W/°C
°C
°C
Maximum
40
0.5
0.35
Units
°C/W
°C/W
°C/W
Rev3.0: January 2020
www.aosmd.com
Page 1 of 6



AOK125A60
AOK125A60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=14A
gFS Forward Transconductance
VDS=10V, ID=14A
VSD Diode Forward Voltage
IS=14A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
600
700
V
0.51
V/ oC
1
mA
10
±100 nA
3.3 3.9 4.5 V
0.108 0.125 Ω
21 S
0.86 1.2
V
28 A
100 A
DYNAMIC PARAMETERS
Ciss
Coss
Co(er)
Co(tr)
Input Capacitance
Output Capacitance
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
2993
85
73
305
pF
pF
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
0.8 pF
2.3 Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=14A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=14A,
RG=5W
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=14A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
39
19
9
39
34
56
19
375
34
8
nC
nC
nC
ns
ns
ns
ns
ns
A
mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.3A, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3.0: January 2020
www.aosmd.com
Page 2 of 6





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