Power Transistor. AONV210A60 Datasheet

AONV210A60 Transistor. Datasheet pdf. Equivalent

Part AONV210A60
Description N-Channel Power Transistor
Feature AONV210A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM tec.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AONV210A60 Datasheet



AONV210A60
AONV210A60
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
Applications
• SMPS with PFC,Flyback and LLC topologies
• Silver ATX,adapter,TV,lighting, Telecom
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
80A
< 0.21Ω
34nC
4.3mJ
Top View
DFN8X8
Bottom View
D
D
Pin1:G
S
S
Orderable Part Number
AONV210A60
Package Type
DFN8x8_4L_EP1_S
G
Pin2: Driver Source
G
S
Driver Source
Form
Tape & Reel
Minimum Order Quantity
3500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Diode reverse recovery
VDS=0 to 400V,IF<=20A,Tj=25°C
VGS
ID
IDM
IDSM
IAR
EAR
EAS
dv/dt
dv/dt
di/dt
TC=25°C
Power Dissipation B Derate above 25°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
600
±20
±30
20
12
80
4.1
3.3
5
12.5
410
100
20
250
208
1.6
8.3
5.3
-55 to 150
300
Units
V
V
V
A
A
A
mJ
mJ
V/ns
V/ns
A/us
W
W/°C
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ
12
40
0.39
Max
15
50
0.6
Units
°C/W
°C/W
°C/W
Rev.1.0: February 2020
www.aosmd.com
Page 1 of 6



AONV210A60
AONV210A60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7.6A
gFS Forward Transconductance
VDS=10V, ID=10A
VSD Diode Forward Voltage
IS=7.6A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
600
700
V
0.49
V/ oC
1
mA
10
±100 nA
4V
0.19 0.21
Ω
16.7 S
0.88 1.2
V
20 A
80 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
1935
55
pF
pF
Effective output capacitance, energy
Co(er)
related I
49 pF
VGS=0V, VDS=0 to 480V, f=1MHz
Co(tr)
Effective output capacitance, time
related J
213 pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
1.25
5
pF
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=10A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=10A,
RG=25W
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=10A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
34
12
8
80
70
80
20
341
28
6.8
nC
nC
nC
ns
ns
ns
ns
ns
A
mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. This is the absoluted maximum rating. Parts are 100% tested at TJ=25°C, L=60mH, IAS=2.7A, VDD=150V, RG=25.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2020
www.aosmd.com
Page 2 of 6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)