Document
AIM702H50B
Intelligent Power Module
External View
Size: 18 x 7.5 x 2.5 mm
Features
• 500V, RDS(on) = 4.0Ω (Max) • Advanced MOSFET technology (αMOS2TM) for motor drives • Low loss and EMI • 3-phase Inverter module including HVIC drivers • Wide input interface (3-18V), Schmitt trigger receiver circuit
(Active High) • Built-in bootstrap diodes with integrated current-limiting resistor • Control supply under-voltage lockout protection (UVLO) • Over-temperature (OT) protection • Temperature monitoring (VOT) – 10kΩ resistor connection • Isolation ratings of 1500Vrms/min
Applications
• AC 100~240Vrms class low power motor drives • Fan motors
Internal Equivalent Circuit / Pin Configuration
VB(U) (1)
VB(V) (2)
VB(W) (3)
IN(UH) (4) IN(VH) (5) IN(WH) (6)
Vcc (7)
IN(UL) (8) IN(VL) (9) IN(WL) (10) VOT (11)
UVB
VVB
WVB
UHIN VHIN WHIN VCC COM
VCC ULIN VLIN WLIN VOT COM
UHO UVS VHO VVS WHO WVS
VLO
WLO
ULO
Rev.1.2 January 2020
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(19) P (18) U1 (17) P (16) V (15) W
(14) U2 (13) N (12) COM
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AIM702H50B
Ordering Information
Part Number AIM702H50B
Temperature Range -40°C to 150°C
Package IPM-7
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant. Please visit www.aosmd.com/media/AOSGreenPolicy.pdf for additional information.
Description N/A
P U1 P V W U2 N COM
VB(U) VB(V) VB(W) IN(UH) IN(VH) IN(WH) Vcc IN(UL) IN(VL) IN(WL) VOT
Pin Description
Pin Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Pin Name
VB(U) VB(V) VB(W) IN(UH) IN(VH) IN(WH) VCC IN(UL) IN(VL) IN(WL) VOT COM
N U2 W V P U1 P
Rev.1.2 January 2020
Figure 1. Pin Configuration
Pin Function High-Side Bias Voltage for U-phase MOSFET Driving High-Side Bias Voltage for V-phase MOSFET Driving High-Side Bias Voltage for W-phase MOSFET Driving Signal Input for High-Side U-phase Signal Input for High-Side V-phase Signal Input for High-Side W-phase Control Supply Voltage Signal Input for Low-Side U-phase Signal Input for Low-Side V-phase Signal Input for Low-Side W-phase Voltage Output of LVIC Temperature Common Supply Ground Negative DC-Link Input Output for U-phase (connect to U1) Output for W-phase Output for V-phase Positive DC-Link Input Output for U-phase (connect to U2) Positive DC-Link Input
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Page 2 of 10
AIM702H50B
Absolute Maximum Ratings (TJ=25°C, unless otherwise specified)
Symbol
Parameter
Inverter BVDSS
MOSFET Breakdown Voltage
ID MOSFET Drain Current (Continuous)
IDP MOSFET Drain Current (Pulsed) PD Maximum Power Dissipation TJ Operating Junction Temperature
Control (Protection)
VCC Control Supply Voltage VBS High-Side Control Bias Voltage
VIN Input Voltage
VOT Temperature Output
Thermal Resistance
Rth(j-c) Rth(j-a)
Junction to Case Thermal Resistance Junction to ambient thermal resistance
Total System
TC Module Case Operation Temperature
TSTG
Storage Temperature
VISO Isolation Voltage
Conditions
TC=25°C TC=80°C TC=25°C, <100µs pulse width TC=25°C
Applied between VCC-COM Applied between VB(U)-U, VB(V)-V, VB(W)-W Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)-COM Applied between VOT-COM
Each MOSFET All operating condition
Measurement point of TC is provided in Figure 2
60Hz, sinusoidal, AC 1min, between connected all pins and heat sink plate
Power pins
Ratings
500 1.5 0.85 2.25 8 -40 to 150
20 20 VCC±0.5 5±0.5
12.5 39
-30 to 125
-40 to 150
1500
Units
V A A A W °C
V V V V
°C/W °C/W
°C
°C
Vrms
XXmm
TC point XXmm
Control pins
Figure 2. TC Measurement Point
Recommended Operation Conditions
Symbol VPN VCC VBS dVCC/dt, dVBS/dt
tdead
fPWM PWIN(ON) PWIN(OFF)
Parameter
Bus Supply Voltage Control Supply Voltage High-Side Bias Voltage
Conditions
Applied between P-N Applied between VCC-COM Applied between VB(U)-U, VB(V)-V, VB(W)-W
Control Supply Variation
Arm Shoot-Through Blocking Time PWM Input Frequency
Minimum Input Pulse Width (1)
For each input signal -40°C < TJ < 150°C
Note: 1. IPM may not respond if the input pulse width is less than PWIN(ON), PWIN(OFF).
Rev.1.2 January 2020
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Min. 0
13.5 13.5
-1
1.5
0.7 0.7
Typ. 300 15.0 15.0
-
-
16 -
Max Units 400 V 16.5 V 16.5 V
1 V/us
- µs - kHz - µs - µs
Page 3 of 10
AIM702H50B
Electrical Characteristics (TJ=25°C, unless otherwise specified)
Symbol
Parameter
Conditions
Inverter
IDSS
Drain-Source Leakage Current
RDS(on)
Drain-Source On-State Resistance
VSD
MOSFET Body Diode Forward Voltage
tOFF tf tON Switching Times tr trr
Control (Protection)
IQCC
Quiescent VCC Supply Current
IQBS
Quiescent VBS Supply Current
UVCCT UVCCR UVBST UVBSR
Supply Circuit UnderVoltage Protection
VOT Temperature Output
OTT OTHYS
Over-Temperature Protection (3)
IIN Input Current
Vth(on)
ON Threshold Voltage
Vth(off)
OFF Threshold Voltage
Bootstrap Diode
VRRM
Maximum Repetitive Reverse Voltage
VF(BSD)
Bootstrap Diode Forward Voltage
RBSD
Bootstrap Diode Equivalent Resistance
VIN=0V, VDS=500V VCC=VBS=15V, VIN=5V VCC.