Signal MOSFET. RQ5E025TN Datasheet

RQ5E025TN MOSFET. Datasheet pdf. Equivalent

Part RQ5E025TN
Description Small Signal MOSFET
Feature RQ5E025TN   Nch 30V 2.5A Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 92mΩ ±2.5A 1.0W lFeatur.
Manufacture ROHM
Total Page 14 Pages
Datasheet
Download RQ5E025TN Datasheet



RQ5E025TN
RQ5E025TN
  Nch 30V 2.5A Small Signal MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
92mΩ
±2.5A
1.0W
lFeatures
1) Low on-resistance
2) Built-in G-S Protection Diode
3) Small Surface Mount Package (TSMT3)
4) Pb-free lead plating ; RoHS compliant
lOutline
SOT-346T
SC-96
TSMT3
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Quantity (pcs)
8
3000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
QZ
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
ID ±2.5 A
Pulsed drain current
IDP*1 ±10 A
Gate - Source voltage
VGSS
±12 V
Power dissipation
PD*2 1.0 W
PD*3 0.7 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.003    



RQ5E025TN
RQ5E025TN
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 125
- - 178
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = 4.5V, ID = 2.5A
RDS(on)*4 VGS = 4.0V, ID = 2.5A
VGS = 2.5V, ID = 2.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 2.5A
Values
Unit
Min. Typ. Max.
30 - - V
- 29 - mV/
- - 1 μA
- - ±10 μA
0.5 - 1.5 V
- -1.6 - mV/
- 66 92
- 70 98 mΩ
- 95 133
- 9.0 -
Ω
2.0 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                             
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20190527 - Rev.003





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