IGBT. RGCL60TS60D Datasheet

RGCL60TS60D IGBT. Datasheet pdf. Equivalent

RGCL60TS60D Datasheet
Recommendation RGCL60TS60D Datasheet
Part RGCL60TS60D
Description IGBT
Feature RGCL60TS60D; RGCL60TS60D 6500V 30A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 600V 30.
Manufacture ROHM
Datasheet
Download RGCL60TS60D Datasheet




ROHM RGCL60TS60D
RGCL60TS60D
6500V 30A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
600V
30A
1.4V
111W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Soft Switching
3) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
4) Pb - free Lead Plating ; RoHS Compliant
lOutline
TO-247N
lInner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
lApplications
Partial Switching PFC
lPackaging Specifications
Packaging
Reel Size (mm)
Tube
-
Discharge Circuit
Brake for Inverter
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Taping Code
C11
Marking
RGCL60TS60D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
VCES
600
Gate - Emitter Voltage
VGES
30
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
48
30
120
35
20
100
111
55
Operating Junction Temperature
Tj -40 to +175
Storage Temperature
*1 Pulse width limited by Tjmax.
Tstg -55 to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
2015.09 - Rev.A



ROHM RGCL60TS60D
RGCL60TS60D
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 1.34 °C/W
- - 2.28 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
600
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 600V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 18.9mA 4.5 5.5 6.5
IC = 30A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
- 1.4 1.8
- 1.6 -
V
V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
2015.09 - Rev.A



ROHM RGCL60TS60D
RGCL60TS60D
Data Sheet
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Input Capacitance
Cies VCE = 30V
- 1600 -
Output Capacitance
Coes VGE = 0V
- 38 -
Reverse Transfer Capacitance
Cres f = 1MHz
- 29 -
Total Gate Charge
Qg VCE = 300V
- 68 -
Gate - Emitter Charge
Qge IC = 30A
- 13 -
Gate - Collector Charge
Qgc VGE = 15V
- 27 -
Turn - on Delay Time
Rise Time
td(on) IC = 30A, VCC = 400V
-
44
-
tr VGE = 15V, RG = 10Ω
-
27
-
Turn - off Delay Time
td(off) Tj = 25°C
- 186 -
Fall Time
tf Inductive Load
- 178 -
Turn - on Switching Loss
Eon *Eon includes diode
- 0.77 -
Turn - off Switching Loss
Eoff reverse recovery
- 1.11 -
Turn - on Delay Time
Rise Time
td(on) IC = 30A, VCC = 400V
-
40
-
tr VGE = 15V, RG = 10Ω
-
45
-
Turn - off Delay Time
td(off) Tj = 175°C
- 207 -
Fall Time
tf Inductive Load
- 272 -
Turn - on Switching Loss
Eon *Eon includes diode
- 0.97 -
Turn - off Switching Loss
Eoff reverse recovery
- 1.54 -
IC = 120A, VCC = 480V
Reverse Bias Safe Operating Area RBSOA VP = 600V, VGE = 15V
RG = 60Ω, Tj = 175°C
FULL SQUARE
Unit
pF
nC
ns
mJ
ns
mJ
-
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/11
2015.09 - Rev.A







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)