N-Channel MOSFET. AOTL66912 Datasheet

AOTL66912 MOSFET. Datasheet pdf. Equivalent

Part AOTL66912
Description N-Channel MOSFET
Feature AOTL66912 100V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technol.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOTL66912 Datasheet



AOTL66912
AOTL66912
100V N-Channel AlphaSGT TM
General Description
• Trench Power MOSFET - AlphaSGTTM technology
• Combination of low RDS(ON) and wide safe operating
area (SOA)
• Higher in-rush current enabled for faster start-up and
shorter down time
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
Applications
• Telecom hotswap
• Load switch
• Solar
• Battery management
100% UIS Tested
100% Rg Tested
Top View
TOLLA
Bottom View
100V
380A
< 1.7mΩ
< 2.5mΩ
D
D
PIN1
Orderable Part Number
AOTL66912
S
G
PIN1
Package Type
TOLLA
G
S
Form
Minimum Order Quantity
Tape & Reel
2000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C (100μS)
Continuous Drain
Current
Avalanche Current C
Avalanche energy
TA=25°C
TA=70°C
L=0.1mH C
TC=25°C
Power Dissipation B TC=100°C
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
380
269
1520
49
39
90
405
500
250
8.3
5.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ
10
35
0.2
Max
15
45
0.3
Units
°C/W
°C/W
°C/W
Rev.1.0: June 2019
www.aosmd.com
Page 1 of 6



AOTL66912
AOTL66912
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250mA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=6V, ID=20A
VDS=5V, ID=20A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Gate Drain Charge
Output Charge
VGS=0V, VDS=50V
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
Min
100
2.5
0.8
Typ Max Units
V
1 μA
5
±100 nA
3.0 3.5 V
1.4 1.7 mΩ
2.25 2.75
2.0 2.5
70 S
0.67
1
V
330 A
12500
3190
55
1.75
2.7
pF
pF
pF
Ω
155 220 nC
48 nC
31 nC
269 nC
36 ns
25 ns
90 ns
40 ns
55 ns
335 nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2019
www.aosmd.com
Page 2 of 6





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