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AOTL66912 Dataheets PDF



Part Number AOTL66912
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOTL66912 DatasheetAOTL66912 Datasheet (PDF)

AOTL66912 100V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Combination of low RDS(ON) and wide safe operating area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications • Telecom hotswap • Load switch • Solar • Battery management 100% UIS Tested 100% Rg Tested Top View TOLLA Bottom View 100V 38.

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AOTL66912 100V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Combination of low RDS(ON) and wide safe operating area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications • Telecom hotswap • Load switch • Solar • Battery management 100% UIS Tested 100% Rg Tested Top View TOLLA Bottom View 100V 380A < 1.7mΩ < 2.5mΩ D D PIN1 Orderable Part Number AOTL66912 S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C (≤100μS) Continuous Drain Current Avalanche Current C Avalanche energy TA=25°C TA=70°C L=0.1mH C TC=25°C Power Dissipation B TC=100°C ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 380 269 1520 49 39 90 405 500 250 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 35 0.2 Max 15 45 0.3 Units °C/W °C/W °C/W Rev.1.0: June 2019 www.aosmd.com Page 1 of 6 AOTL66912 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=6V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qgs Qgd Qoss tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge VGS=10V, VDS=50V, ID=20A Gate Drain Charge Output Charge VGS=0V, VDS=50V Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=50V, RL=2.5W, RGEN=3W Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms Min 100 2.5 0.8 Typ Max Units V 1 μA 5 ±100 nA 3.0 3.5 V 1.4 1.7 mΩ 2.25 2.75 2.0 2.5 mΩ 70 S 0.67 1 V 330 A 12500 3190 55 1.75 2.7 pF pF pF Ω 155 220 nC 48 nC 31 nC 269 nC 36 ns 25 ns 90 ns 40 ns 55 ns 335 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: June 2019 www.aosmd.com Page 2 of 6 AOTL66912 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 6V 200 8V 10V 150 100 ID (A) 250 VDS=5V 200 150 5V 100 ID (A) 125°C RDS(ON) (mW) 50 4.5V VGS=4V 0 012345 VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 3 VGS=6V 2 1 VGS=10V 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 8 ID=20A Normalized On-Resistance 50 25°C 0 1234567 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 2.2 2 VGS=10V 1.8 ID=20A 1.6 1.4 1.2 VGS=6V ID=20A 1 0.8 0 25 50 75 100 125 150 175 200 Temperat.


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