Document
AOTL66912
100V N-Channel AlphaSGT TM
General Description
• Trench Power MOSFET - AlphaSGTTM technology • Combination of low RDS(ON) and wide safe operating
area (SOA) • Higher in-rush current enabled for faster start-up and
shorter down time • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
Applications
• Telecom hotswap • Load switch • Solar • Battery management
100% UIS Tested 100% Rg Tested
Top View
TOLLA
Bottom View
100V 380A < 1.7mΩ < 2.5mΩ
D
D
PIN1
Orderable Part Number
AOTL66912
S G PIN1
Package Type
TOLLA
G S
Form
Minimum Order Quantity
Tape & Reel
2000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C (≤100μS)
Continuous Drain Current Avalanche Current C
Avalanche energy
TA=25°C TA=70°C
L=0.1mH C
TC=25°C Power Dissipation B TC=100°C
ID
IDM IDSM
IAS EAS PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 380 269 1520 49 39 90 405 500 250 8.3 5.3
-55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 10 35 0.2
Max 15 45 0.3
Units °C/W °C/W °C/W
Rev.1.0: June 2019
www.aosmd.com
Page 1 of 6
AOTL66912
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250mA, VGS=0V VDS=100V, VGS=0V
IGSS VGS(th)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage
VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
VGS=6V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qgs Qgd Qoss tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Gate Drain Charge
Output Charge
VGS=0V, VDS=50V
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5W, RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
Min 100 2.5
0.8
Typ Max Units
V
1 μA 5
±100 nA
3.0 3.5 V
1.4 1.7 mΩ 2.25 2.75 2.0 2.5 mΩ
70 S
0.67
1
V
330 A
12500 3190
55 1.75
2.7
pF pF pF Ω
155 220 nC 48 nC 31 nC 269 nC 36 ns 25 ns 90 ns 40 ns 55 ns 335 nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2019
www.aosmd.com
Page 2 of 6
AOTL66912
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250 6V
200 8V 10V
150
100
ID (A)
250 VDS=5V
200
150 5V
100
ID (A)
125°C
RDS(ON) (mW)
50 4.5V VGS=4V
0 012345
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
4
3 VGS=6V
2
1 VGS=10V
0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
8 ID=20A
Normalized On-Resistance
50 25°C
0 1234567
VGS (Volts) Figure 2: Transfer Characteristics (Note E)
2.2
2 VGS=10V
1.8 ID=20A
1.6
1.4
1.2 VGS=6V ID=20A
1
0.8 0
25 50 75 100 125 150 175 200
Temperat.