N-Channel MOSFET. AOT66616L Datasheet

AOT66616L MOSFET. Datasheet pdf. Equivalent

Part AOT66616L
Description N-Channel MOSFET
Feature AOT66616L/AOB66616L 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTT.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOT66616L Datasheet



AOT66616L
AOT66616L/AOB66616L
60V N-Channel AlphaSGT TM
General Description
• Trench Power MOSFET - AlphaSGTTM technology
• Low RDS(ON)
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
60V
140A
< 3.2mΩ
< 4.6mΩ
Applications
• Synchronous Rectification in DC/DC and AC/DC
Converters
• Industrial and Motor Drive applications
Top View
D
TO220
Bottom View
D
100% UIS Tested
100% Rg Tested
Top View
D
TO-263
D2PAK
Bottom View
D
D
G DS
AOT66616L
Orderable Part Number
AOT66616L
AOB66616L
S DG
Package Type
TO-220
TO-263
S
G
AOB66616L
G
S
G
S
Form
Tube
Tape & Reel
Minimum Order Quantity
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.3mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
140
95
330
38.5
30.5
35
184
125
50
8.3
5.3
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ
12
50
0.8
Max
15
60
1.0
Units
°C/W
°C/W
°C/W
Rev.2.0: April 2019
www.aosmd.com
Page 1 of 6



AOT66616L
AOT66616L/AOB66616L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250mA, VGS=0V
VDS=60V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=6V, ID=20A
VDS=5V, ID=20A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=20A
Gate Drain Charge
Output Charge
Turn-On DelayTime
VGS=0V, VDS=30V
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=1.5W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
Min
60
2.4
0.6
Typ
2.9
2.5
4.0
3.4
100
0.7
2870
940
38
1.25
42.5
12
10
54
14.5
15.5
33
12.5
26
87
Max Units
1
5
±100
3.4
3.2
5.1
4.6
1
135
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
1.9 Ω
60 nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: April 2019
www.aosmd.com
Page 2 of 6





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