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AOB66616L

Alpha & Omega Semiconductors

N-Channel MOSFET

AOT66616L/AOB66616L 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low R...


Alpha & Omega Semiconductors

AOB66616L

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Description
AOT66616L/AOB66616L 60V N-Channel AlphaSGT TM General Description Trench Power MOSFET - AlphaSGTTM technology Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 140A < 3.2mΩ < 4.6mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Top View D TO220 Bottom View D 100% UIS Tested 100% Rg Tested Top View D TO-263 D2PAK Bottom View D D G DS AOT66616L Orderable Part Number AOT66616L AOB66616L S DG Package Type TO-220 TO-263 S G AOB66616L G S G S Form Tube Tape & Reel Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 140 95 330 38.5 30.5 35 184 125 50 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 50 0.8 Max 15 60 1.0 Units °C/W °C/W °C/W Rev.2.0: April 201...




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