N-Channel MOSFET
AOT66616L/AOB66616L
60V N-Channel AlphaSGT TM
General Description
• Trench Power MOSFET - AlphaSGTTM technology • Low R...
Description
AOT66616L/AOB66616L
60V N-Channel AlphaSGT TM
General Description
Trench Power MOSFET - AlphaSGTTM technology Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
60V 140A < 3.2mΩ < 4.6mΩ
Applications
Synchronous Rectification in DC/DC and AC/DC Converters
Industrial and Motor Drive applications
Top View D
TO220
Bottom View D
100% UIS Tested 100% Rg Tested
Top View D
TO-263 D2PAK
Bottom View
D
D
G DS AOT66616L
Orderable Part Number
AOT66616L AOB66616L
S DG
Package Type
TO-220 TO-263
S G
AOB66616L
G S
G
S
Form
Tube Tape & Reel
Minimum Order Quantity
1000 800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.3mH
TC=25°C Power Dissipation B TC=100°C
C
VGS ID
IDM IDSM
IAS EAS PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 140 95 330 38.5 30.5 35 184 125 50 8.3 5.3
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 12 50 0.8
Max 15 60 1.0
Units °C/W °C/W °C/W
Rev.2.0: April 201...
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