N-Channel MOSFET. AONS32310 Datasheet

AONS32310 MOSFET. Datasheet pdf. Equivalent

Part AONS32310
Description N-Channel MOSFET
Feature AONS32310 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) •.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AONS32310 Datasheet



AONS32310
AONS32310
30V N-Channel MOSFET
General Description
• Trench Power MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
400A
< 1.05mΩ
< 1.43mΩ
Applications
• High performance ORing, Efuse
• Ultra high current battery charge/discharge
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
Top View
D
PIN1
S
S
S
G
PIN1
1
2
3
4
8D
7D
6D
5 DG
S
Orderable Part Number
AONS32310
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current
TC=100°C
Pulsed Drain Current C (10μS)
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
400
305
1500
60
50
80
320
400
160
6.2
4
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ
15
40
0.26
Max
20
50
0.31
Units
°C/W
°C/W
°C/W
Rev.4.0: May 2019
www.aosmd.com
Page 1 of 6



AONS32310
AONS32310
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75W,
RGEN=3W
IF=20A, di/dt=500A/ms
IF=20A, di/dt=500A/ms
Min
30
0.8
0.6
Typ
1.3
0.8
1
1.1
68
0.6
15350
1430
900
1.3
240
110
28
35
17
16.5
150
35
20
65
Max Units
1
5
±100
1.8
1.05
1.25
1.43
1
200
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
2Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: May 2019
www.aosmd.com
Page 2 of 6





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