AOTF190A60CL

AOTF190A60CL/AOT190A60CL/AOB190A60CL 600V, a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC,Flyback and LLC topologies Silver ATX,adapter,TV,lighting,Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 700V 80A < 0.19Ω 34nC 4.3mJ D AOT190A60CL DS G Orderable Part Number AOTF190A60CL AOT190A60CL AOB190A60CL GDS AOTF190A60CL Package Type TO-220F Green TO220 Green TO263 Green S G AOB190A60CL Form Tube Tube Tape&Reel G S Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)190A60CL AOTF190A60CL Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 20 20* 12 12* 80 5 12.5 410 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 208 32 1.7 0.25 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A m...