P-Channel MOSFET. AO4407C Datasheet

AO4407C MOSFET. Datasheet pdf. Equivalent

Part AO4407C
Description P-Channel MOSFET
Feature AO4407C 30V P-Channel MOSFET General Description • Latest Advanced Trench Technology • Low RDS(ON) .
Manufacture Alpha & Omega Semiconductors
Total Page 5 Pages
Datasheet
Download AO4407C Datasheet



AO4407C
AO4407C
30V P-Channel MOSFET
General Description
• Latest Advanced Trench Technology
• Low RDS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
-30V
-14A
< 11.5mΩ
< 18.5mΩ
Applications
• Notebook AC-in Load Switch
• Battery Protection Charge/Discharge
100% UIS Tested
100% Rg Tested
SO-8
Top View
D
D
D
D
Bottom View
G
S
S
S
Top View
S1
S2
S3
G4
8D
7D
6D
5D
Orderable Part Number
AO4407C
Package Type
SO-8
Form
Tape & Reel
D
G
S
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH
TA=25°C
Power Dissipation B TA=70°C
C
VGS
ID
IDM
IAS
EAS
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±25
-14
-11
-56
-33
54
3.1
2.0
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Rev.1.0: November 2019
www.aosmd.com
Page 1 of 5



AO4407C
AO4407C
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250mA, VGS=0V
IDSS Zero Gate Voltage Drain Current
• Latest
VDS=-30V, VGS=0V
advanced Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=-250mA
VGS=-10V, ID=-14A
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-10A
gFS Forward Transconductance
VDS=-5V, ID=-14A
VSD Diode Forward Voltage
IS=-1A, VGS=0V
IS Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-14A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.05W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-14A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=-14A, di/dt=500A/ms
Min
-30
-1.3
Typ
-1.8
9.5
13.2
14.7
42
-0.7
2050
330
300
3.2
40
20
6
10
11
10
40
18
14
25
Max Units
-1
-5
±100
-2.3
11.5
15.8
18.5
-1
-4
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
6.4 Ω
60 nC
30 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2019
www.aosmd.com
Page 2 of 5





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