AO4407C

AO4407C 30V P-Channel MOSFET General Description Latest Advanced Trench Technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -14A < 11.5mΩ < 18.5mΩ Applications Notebook AC-in Load Switch Battery Protection Charge/Discharge 100% UIS Tested 100% Rg Tested SO-8 Top View D D D D Bottom View G S S S Top View S1 S2 S3 G4 8D 7D 6D 5D Orderable Part Number AO4407C Package Type SO-8 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C C VGS ID IDM IAS EAS PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -14 -11 -56 -33 54 3.1 2.0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: November 2019 www.aosmd.com Page 1 of 5 AO4407C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V IDSS Zero Gate Voltage Drain Current Latest...