AONY36354

AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description Trench Power MOSFET technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 49A <5.3mΩ <9.1mΩ Q2 30V 85A <2.6mΩ <3.5mΩ Applications DC/DC Converters in Computing POL in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 5X6D S2 Pin 1 Bottom View G2 S1/D2 G1 D1 Pin 1 Top View Bottom View Orderable Part Number AONY36354 Package Type DFN 5x6D Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD ±20 49 31 100 18.5 15 50 13 21 8.5 ±12 85G 54.5 185 27 22 75 28 31.5 12.5 TA=25°C Power Dissipation A TA=70°C PDSM 3.1 2 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 30 30 40 40 50 50 65 65 4.6 3.1 6 4 Units °C/W °C/W °C/W Rev.1....