AOT380A60L

AOTF380A60L/AOT380A60L 600V a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC, Flyback and LLC topologies Silver ATX ,adapter, TV, lighting, Server power Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F 700V 44A < 0.38Ω 20nC 2.6mJ D AOT380A60L S D G AOTF380A60L DS G G S Orderable Part Number AOT380A60L AOTF380A60L Package Type TO-220 Green TO-220F Green Form Tube Tube Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT380A60L AOTF380A60L Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G (TJ=25°C, VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 11 11* 7.2 7.2* 44 2.5 3.1 210 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 131 27 1.0 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics P...