Power Transistor. AOT380A60L Datasheet

AOT380A60L Transistor. Datasheet pdf. Equivalent

Part AOT380A60L
Description N-Channel Power Transistor
Feature AOTF380A60L/AOT380A60L 600V a MOS5 TM N-Channel Power Transistor General Description • Proprietary .
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOT380A60L Datasheet



AOT380A60L
AOTF380A60L/AOT380A60L
600V a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
Applications
• SMPS with PFC, Flyback and LLC topologies
• Silver ATX ,adapter, TV, lighting, Server power
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
700V
44A
< 0.38Ω
20nC
2.6mJ
D
AOT380A60L
S
D
G
AOTF380A60L
DS
G
G
S
Orderable Part Number
AOT380A60L
AOTF380A60L
Package Type
TO-220 Green
TO-220F Green
Form
Tube
Tube
Minimum Order Quantity
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT380A60L
AOTF380A60L
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±20
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G (TJ=25°C,
VGS=10V, IL=2Apk, L=105mH, RGS=25W)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
±30
11 11*
7.2 7.2*
44
2.5
3.1
210
100
20
TC=25°C
Power Dissipation B Derate above 25°C
PD
131 27
1.0 0.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-55 to 150
300
Units
V
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RqJA
RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT380A60L
65
0.5
0.95
AOTF380A60L
65
--
4.6
Units
°C/W
°C/W
°C/W
Rev.1.2: June 2018
www.aosmd.com
Page 1 of 6



AOT380A60L
AOTF380A60L/AOT380A60L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A
gFS Forward Transconductance
VDS=10V, ID=5.5A
VSD Diode Forward Voltage
IS=5.5A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
600 -
- 700
-
-
V
- 0.44 - V/ oC
- -1
mA
- - 10
- - ±100 nA
2.6 3.2 3.8
V
-
0.33 0.38
Ω
- 10 - S
- 0.85 1.2 V
- - 11 A
- - 44 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Co(tr)
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
- 955 - pF
- 29 - pF
- 30 - pF
- 122 - pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
- 2.4 - pF
- 4.8 - Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
- 20 - nC
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=5.5A
- 4.6 - nC
Qgd Gate Drain Charge
- 6.6 - nC
tD(on)
Turn-On DelayTime
- 20 - ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=5.5A,
RG=5W
- 13 - ns
- 43 - ns
tf Turn-Off Fall Time
- 16 - ns
trr Body Diode Reverse Recovery Time
- 251 - ns
Irm
Peak Reverse Recovery Current
IF=5.5A, dI/dt=100A/ms, VDS=400V
-
19
-
A
Qrr Body Diode Reverse Recovery Charge
- 3.1 - mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. This is the absoluted maximum rating. Parts are 100% tested at TJ=25°C, L=60mH, IAS=1A, VDD=150V, RG=25.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.2: June 2018
www.aosmd.com
Page 2 of 6





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