Power Transistor. AOTF190A60L Datasheet

AOTF190A60L Transistor. Datasheet pdf. Equivalent

Part AOTF190A60L
Description N-Channel Power Transistor
Feature AOTF190A60L 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM te.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOTF190A60L Datasheet



AOTF190A60L
AOTF190A60L
600V, a MOS5 TM N-Channel Power Transistor
General Description
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
Applications
• SMPS with PFC, Flyback and LLC topologies
• Silver ATX ,adapter, TV, lighting, Telecom
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220F
700V
80A
< 0.19Ω
34nC
4.3mJ
D
AOTF190A60L
DS
G
G
S
Orderable Part Number
AOTF190A60L
Package Type
TO-220F Green
Form
Tube
Minimum Order Quantity
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Gate-Source Voltage (dynamic) AC( f>1Hz)
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOTF190A60L
600
±20
±30
20*
12*
80
5
12.5
410
100
20
32
0.25
-55 to 150
300
Units
V
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RqJA
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOTF190A60L
65
3.9
Units
°C/W
°C/W
Rev.4.1: June 2018
www.aosmd.com
Page 1 of 6



AOTF190A60L
AOTF190A60L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250mA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7.6A
gFS Forward Transconductance
VDS=10V, ID=10A
VSD Diode Forward Voltage
IS=10A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
600 -
- 700
-
-
V
- 0.59 - V/ oC
- -1
mA
- - 10
- - ±100 nA
3.2 4 4.6 V
-
0.17 0.19
Ω
- 16 - S
- 0.85 1.2 V
- - 20 A
- - 80 A
DYNAMIC PARAMETERS
Ciss
Coss
Co(er)
Co(tr)
Input Capacitance
Output Capacitance
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
- 1935 -
- 55 -
- 49 -
- 213 -
pF
pF
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
- 1.25 -
-5-
pF
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
- 34 - nC
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=10A
- 12 - nC
Qgd Gate Drain Charge
- 11 - nC
tD(on)
Turn-On DelayTime
- 49 - ns
tr Turn-On Rise Time
VGS=10V, VDS=400V, ID=10A,
- 40 - ns
tD(off)
Turn-Off DelayTime
RG=25W
- 115 - ns
tf Turn-Off Fall Time
- 26 - ns
trr Body Diode Reverse Recovery Time
- 341 - ns
Irm
Peak Reverse Recovery Current
IF=10A, dI/dt=100A/ms, VDS=400V
-
28
-
A
Qrr Body Diode Reverse Recovery Charge
- 6.8 - mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.7A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.1: June 2018
www.aosmd.com
Page 2 of 6





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