AOTF190A60L

AOTF190A60L 600V, a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC, Flyback and LLC topologies Silver ATX ,adapter, TV, lighting, Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220F 700V 80A < 0.19Ω 34nC 4.3mJ D AOTF190A60L DS G G S Orderable Part Number AOTF190A60L Package Type TO-220F Green Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL AOTF190A60L 600 ±20 ±30 20* 12* 80 5 12.5 410 100 20 32 0.25 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. AOTF190A60L ...