AOCA24106E

AOCA24106E 12V Common-Drain Dual N-Channel MOSFET General Description Trench Power MOSFET Technology Low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applications Battery protection switch Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 5.6mΩ < 6mΩ < 7mΩ < 8.5mΩ HBM Class 3A AlphaDFNTM 1.9x1.6_6 Top View Bottom View PIN1 Top View PIN1 Bottom View 1, 3: Source(FET1) 2: Gate(FET1) 4, 6: Source(FET2) 5: Gate(FET2) Orderable Part Number AOCA24106E Package Type AlphaDFNTM 1.9x1.6_6 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS IS ISM PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 20 100 2.7 -55 to 150 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RθJA Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board. Note 2. PW <10 µs pulses, duty cycle 1% max. Typical 35 45 G1 G2 S1 (FET1) S2 (FET2) Minimum Order Quantity 8000 Units V V A W °C Units °C/W °C/W Rev.1.0: July 2018 www.aosmd.com Page 1 of 5...