N-Channel MOSFET
AONS66923
100V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Lev...
Description
AONS66923
100V N-Channel AlphaSGT TM
General Description
Trench Power AlphaSGTTM technology Low RDS(ON) Logic Level Driving Excellent QG x RDS(ON) Product (FOM) Spike Optimized Process RoHS and Halogen-Free Compliant
Applications
High Frequency Switching and Synchronous Rectification
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
100V 47A < 10.8mΩ < 14.8mΩ
Top View
DFN5X6 Bottom View
Top View
D
PIN1
Orderable Part Number
AONS66923
S S S G PIN1
1 2 3 4
8D 7D 6D 5 DG
S
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.1mH
TC=25°C Power Dissipation B TC=100°C
C
VGS ID
IDM IDSM
IAS EAS PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 47 30 105 15 12 30 45 48 19 5.0 3.2
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 20 45 2.1
Max 25 55 2.6
Units °C/W °C/W °C/W
Rev.1.0: April 2018
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AONS66923
Electrical Characteristics (TJ=25°C unless oth...
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