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AONS66923

Alpha & Omega Semiconductors

N-Channel MOSFET

AONS66923 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Lev...


Alpha & Omega Semiconductors

AONS66923

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Description
AONS66923 100V N-Channel AlphaSGT TM General Description Trench Power AlphaSGTTM technology Low RDS(ON) Logic Level Driving Excellent QG x RDS(ON) Product (FOM) Spike Optimized Process RoHS and Halogen-Free Compliant Applications High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 47A < 10.8mΩ < 14.8mΩ Top View DFN5X6 Bottom View Top View D PIN1 Orderable Part Number AONS66923 S S S G PIN1 1 2 3 4 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 47 30 105 15 12 30 45 48 19 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 20 45 2.1 Max 25 55 2.6 Units °C/W °C/W °C/W Rev.1.0: April 2018 www.aosmd.com Page 1 of 6 AONS66923 Electrical Characteristics (TJ=25°C unless oth...




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