N-Channel MOSFET. AONP36336 Datasheet

AONP36336 MOSFET. Datasheet pdf. Equivalent

Part AONP36336
Description Dual Asymmetric N-Channel MOSFET
Feature AONP36336 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom source technology • Ver.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AONP36336 Datasheet



AONP36336
AONP36336
30V Dual Asymmetric N-Channel MOSFET
General Description
• Bottom source technology
• Very Low RDS(ON) at Vgs 4.5V
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Q1 Q2
30V 30V
21A 18A
< 4.7mΩ < 5.8mΩ
< 5.7mΩ < 7.3mΩ
Applications
• Buck-boost Converters in Computing
• Point of Load Converter
• See Note I
100% UIS Tested
100% Rg Tested
DFN3.3x3.3B
Top View
Q1
Bottom View
Pin 1
Pin 1
Q2
Orderable Part Number
AONP36336
Package Type
DFN3.3x3.3B
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
±12
50
42
110
21
17
60
18
33
13
±12
50
35.5
88
18
14.5
45
10
30
12
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.4
2.2
3.1
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ Q1 Typ Q2 Max Q1 Max Q2
30 33 36 40
52 55 63 66
3 3.3 3.8 4.2
Units
°C/W
°C/W
°C/W
Rev.1.0: June 2018
www.aosmd.com
Page 1 of 10



AONP36336
AONP36336
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±12V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.1
V
1 μA
5
±100 nA
1.5 1.9
V
3.9 4.7 mΩ
5.4 6.5
4.5 5.7
100 S
0.7 1 V
40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
1330
280
35
0.4 0.8
1.2
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75W,
RGEN=3W
IF=20A, di/dt=500A/ms
IF=20A, di/dt=500A/ms
19 29
8 14
3
2
5.5
2.5
21.5
2
11
19
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2018
www.aosmd.com
Page 2 of 10





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