N-Channel MOSFET
AONS36314
30V N-Channel MOSFET
General Description
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • H...
Description
AONS36314
30V N-Channel MOSFET
General Description
Trench Power MOSFET technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
30V 85A < 2.9mΩ < 3.5mΩ
Applications
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial See Note I
100% UIS Tested 100% Rg Tested
Top View
DFN5X6 Bottom View
Top View
D
PIN1
Orderable Part Number
AONS36314
S S S G PIN1
1 2 3 4
Package Type
DFN 5x6
8D 7D 6D 5 DG
S
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.01mH
TC=25°C Power Dissipation B TC=100°C
C
VGS ID
IDM IDSM
IAS EAS PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±12 85 60 185 36.5 29 75 28 42 17 6.2 4
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 15 40 2.4
Max 20 50 3
Units °C/W °C/W °C/W
Rev.1.0: August 2018
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AONS36314
Electrical Characteristics (TJ=25°C unle...
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