N-Channel MOSFET. AO3160E Datasheet

AO3160E MOSFET. Datasheet pdf. Equivalent

Part AO3160E
Description N-Channel MOSFET
Feature General Description • Logic Level Driving 4.5V • ESD Protection • RoHS and Halogen Free Compliant Ap.
Manufacture Alpha & Omega Semiconductors
Total Page 5 Pages
Datasheet
Download AO3160E Datasheet



AO3160E
General Description
• Logic Level Driving 4.5V
• ESD Protection
• RoHS and Halogen Free Compliant
Applications
• Load Switch
AO3160E
600V,0.04A N-Channel MOSFET
Product Summary
VDS @ Tj,max
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Typical ESD protection
700V
0.04A
< 500Ω
< 600Ω
HBM Class 2
Top View
D
Bottom View
D
D
SG
G
G
AO3160E
Orderable Part Number
AO3160E
S
Package Type
SOT23A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TA=25°C
Current A,F
TA=70°C
Pulsed Drain Current B
Peak diode recovery dv/dt
VGS
ID
IDM
dv/dt
Power Dissipation A
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
S
Form
Minimum Order Quantity
Tape & Reel
3000
Maximum
600
±20
0.04
0.03
0.12
5
1.39
0.89
-55 to 150
300
Units
V
V
A
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typical
70
100
63
Maximum
90
125
80
Units
°C/W
°C/W
°C/W
Rev.1.0: May 2018
www.aosmd.com
Page 1 of 5



AO3160E
AO3160E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Cofficient
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=8µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=0.016A
VGS=4.5V, ID=0.016A
gFS Forward Transconductance
VDS=40V, ID=0.016A
VSD Diode Forward Voltage
IS=0.016A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=25V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=400V, ID=0.01A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=0.01A,
RG=6
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=0.016A, dI/dt=100A/µs,
Body Diode Reverse Recovery Charge VDS=300V
Min Typ Max Units
600 -
- 700
-
-
V
- 0.68
- V/ oC
- -1
µA
- - 10
- - ±10 µA
1.4 2 3.2 V
-
176 500
-
178 600
- 0.125 -
S
- 0.76 1
V
- - 0.04 A
- - 0.12 A
- 9.5 - pF
- 1.7 - pF
- 0.6 - pF
- 20 -
- 0.9 - nC
- 0.09 - nC
- 0.49 - nC
- 4 - ns
- 5 - ns
- 13 - ns
- 55 - ns
- 105 - ns
- 9.5 - nC
A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2018
www.aosmd.com
Page 2 of 5





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