Recovery Diode. RFN2LAM4STF Datasheet

RFN2LAM4STF Diode. Datasheet pdf. Equivalent

RFN2LAM4STF Datasheet
Recommendation RFN2LAM4STF Datasheet
Part RFN2LAM4STF
Description Super Fast Recovery Diode
Feature RFN2LAM4STF; Super Fast Recovery Diode RFN2LAM4STF Datasheet Series Dimensions (Unit : mm) AEC-Q101 Qualif.
Manufacture ROHM
Datasheet
Download RFN2LAM4STF Datasheet




ROHM RFN2LAM4STF
Super Fast Recovery Diode
RFN2LAM4STF
Datasheet
Series
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
Standard Fast Recovery
2.50±0.20
0.17±
0.10
0.05
2.0
(1)
Applications
General rectification
PMDTM
Features
1) Low forward voltage
2) Low switching loss
3) High current overload capacity
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
Structure Cathode
Anode
Absolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
Io
Non-repetitive forward surge current IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal resistance
Rth(j-l)
Conditions
Limits Unit
Duty0.5
400 V
Direct reverse voltage
Glass epoxy board mounted,
60Hz half sin wave, resistive load
60Hz half sin wave,
non-repetitive at Tj=25ºC
T=102°C
-
400
1.5
50
150
V
A
A
°C
- 55 to 150 °C
Conditions
IF=1.5A
VR=400V
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to lead
Min. Typ. Max. Unit
0.65 0.88 1.2 V
- - 1 A
- 22 30 ns
- - 25 °C/W
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© 2017 ROHM Co., Ltd. All rights reserved.
1/4
2017.06 - Rev.A



ROHM RFN2LAM4STF
RFN2LAM4STF
Electrical Characteristic Curves
Datasheet
100
Tj = 150°C
10
Tj = 125°C
1
0.1
0.01
Tj = 75°C
Tj = 25°C
Tj = 40°C
0.001
0 200 400 600 800 10001200140016001800
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
Tj = 150°C Tj = 125°C
1000
100
10
Tj = 75°C
Tj = 25°C
1 Tj = 40°C
0.1
0.01
0
100 200 300
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
400
1000
100
f = 1MHz
Ta = 25°C
1000
100
IFSM
8.3ms 8.3ms
1cyc.
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
10
Tj = 25°C
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2017 ROHM Co., Ltd. All rights reserved.
2/4
2017.06 - Rev.A



ROHM RFN2LAM4STF
RFN2LAM4STF
Electrical Characteristic Curves
Datasheet
1000
100
10
IFSM
time
1000
100
20mm × 20mm × 0.8mm glass epoxy(FR-4)
Both side is all covered with copper
(35um thickness)
Rth(j-a)
Rth(j-l)
10
Tj = 25°C
1
1 10 100
TIME : t(ms)
IFSM-t CHARACTERISTICS
1.8
D.C.
1.6
D = 0.5
1.4
1.2
1
D = 0.2
0.8
0.6 D = 0.1
0A Io
0V
t
VR
D=t/T
T VR=VRmax
Tj=150°C
half sin wave
0.4
0.2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
1
0.001 0.01 0.1 1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
2.5
D.C.
2
D = 0.5
1.5
half sin wave
1 D = 0.2
D = 0.1
0.5
0A Io
0V
t
VR
D=t/T
T VR=VRmax
Tj=150°C
0
0 25 50 75 100 125 150
LEAD TEMPERATURE : Tl(°C)
DERATING CURVE (Io-Tl)
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© 2017 ROHM Co., Ltd. All rights reserved.
3/4
2017.06 - Rev.A







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