Complementary MOSFET. AOND32324 Datasheet

AOND32324 MOSFET. Datasheet pdf. Equivalent

Part AOND32324
Description Dual Complementary MOSFET
Feature AOND32324 30V Dual Complementary MOSFET General Description • Pch+Nch Complementary MOSFET • Trench.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOND32324 Datasheet



AOND32324
AOND32324
30V Dual Complementary MOSFET
General Description
• Pch+Nch Complementary MOSFET
• Trench Power MOSFET
• Low RDS(ON)
• Low Gate Charge
• Excellent Thermal Performance
• RoHS and Halogen Free Compliant
Applications
• Motor Drive
• DC-FAN
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Q1 Q2
30V -30V
16A -16A
< 14mΩ < 12mΩ
< 18mΩ < 19.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6 EP2
PIN1
Top View
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1
D1 D2
G2
S1
S2
Orderable Part Number
AOND32324
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
±20
16
16
50
13
10
22
24
12.5
5
±25
-16
-16
-65
-15
-12
33
54
30
12
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.5
2.2
4.1
2.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
25
50
7
Typ Q2
20
48
3.5
Max Q1 Max Q2
35 30
70 65
10 4.2
Units
°C/W
°C/W
°C/W
Rev.1.0: Octomber 2017
www.aosmd.com
Page 1 of 11



AOND32324
AOND32324
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=12A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=10A
VDS=5V, ID=12A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=12A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.25,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=12A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=12A, di/dt=500A/µs
Min
30
1.5
0.8
Typ Max Units
V
1
µA
5
±100 nA
1.9 2.5 V
11 14
mΩ
16 20
14 18 mΩ
43 S
0.75 1
V
10 A
760 pF
125 pF
70 pF
1.6 2.4 Ω
14 20 nC
6.6 10 nC
2.4 nC
3 nC
4.4 ns
9 ns
17 ns
6 ns
7 ns
8 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Octomber 2017
www.aosmd.com
Page 2 of 11





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)