AOND32324

AOND32324 30V Dual Complementary MOSFET General Description Pch+Nch Complementary MOSFET Trench Power MOSFET Low RDS(ON) Low Gate Charge Excellent Thermal Performance RoHS and Halogen Free Compliant Applications Motor Drive DC-FAN Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V -30V 16A -16A < 14mΩ < 12mΩ < 18mΩ < 19.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 EP2 PIN1 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 D1 D2 G2 S1 S2 Orderable Part Number AOND32324 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 -30 Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD ±20 16 16 50 13 10 22 24 12.5 5 ±25 -16 -16 -65 -15 -12 33 54 30 12 TA=25°C Power Dissipation A TA=70°C PDSM 3.5 2.2 4.1 2.6 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 25 50 7 Typ Q2 20 48 3.5 Max Q1 Max Q2 35 30 70 65 10 4.2 Units °C/W °C/W °C/W Rev.1.0: Octomber 2017 www.a...