Power Transistor. AOB20S60L Datasheet

AOB20S60L Transistor. Datasheet pdf. Equivalent

Part AOB20S60L
Description Power Transistor
Feature AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 600V 20A α MOS TM Power Transistor General Description Pr.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOB20S60L Datasheet



AOB20S60L
AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60
600V 20A α MOS TM Power Transistor
General Description
Product Summary
The AOT20S60L & AOB20S60L & AOTF20S60L &
AOTF20S60 have been fabricated using the advanced αMOSTM
high voltage process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
80A
0.199
20nC
4.9µJ
TO-220
D
Top View
TO-220F(3kVAC; 1s)
TO-263
D2PAK
D
D
AOT20S60L
S
D
G
AOTF20S60(L)
S
D
G
G
AOB20S60L
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT20S60L/AOB20S60L AOTF20S60
600
±30
20 20*
14 14*
80
3.4
23
188
266 50
2.1 0.4
100
20
-55 to 150
300
AOT20S60L/AOB20S60L
65
0.5
0.47
AOTF20S60
65
--
2.5
AOTF20S60L
20*
14*
37.8
0.3
AOTF20S60L
65
--
3.3
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 6.0: Sepetember 2017
www.aosmd.com
Page 1 of 7



AOB20S60L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=10A, TJ=25°C
VGS=10V, ID=10A, TJ=150°C
VSD Diode Forward Voltage
IS=10A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Crss
Rg
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=10A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=10A,
RG=25
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=400V
Peak Reverse Recovery Current
IF=10A,dI/dt=100A/µs,VDS=400V
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V
Min Typ Max Units
600 -
-
650 700
-
V
- -1
µA
- 10 -
- - ±100 nΑ
2.8 3.4 4.1
V
- 0.18 0.199
- 0.48 0.53
- 0.84 -
V
- - 20 A
- - 80 A
- 1038 -
- 68 -
- 56.6 -
pF
pF
pF
- 176.5 -
- 2.1 -
- 9.3 -
pF
pF
- 19.8 -
- 4.6 -
- 7.6 -
- 27.5 -
- 32 -
- 87.5 -
- 30 -
- 350 -
- 27 -
- 5.7 -
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6.0: Sepetember 2017
www.aosmd.com
Page 2 of 7





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)