AOTF20S60L

AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 600V 20A a MOS TM Power Transistor General Description Product Summary The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 80A 0.199W 20nC 4.9mJ Top View TO-220 TO-220F(3kVAC; 1s) TO-263 D2PAK D D D AOT20S60L S D G AOTF20S60(L) S D G G S G AOB20S60L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. AOT20S60L/AOB20S60...