AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60
600V 20A a MOS TM Power Transistor
General Description
Product Summary
The A...
AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60
600V 20A a MOS TM Power
Transistor
General Description
Product Summary
The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 80A 0.199W 20nC 4.9mJ
Top View
TO-220
TO-220F(3kVAC; 1s)
TO-263 D2PAK
D
D
D
AOT20S60L
S D G
AOTF20S60(L)
S D G
G
S G AOB20S60L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
TC=25°C Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RqJA
Maximum Case-to-sink A
RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT20S60L/AOB20S60...