P-Channel MOSFET. AON1611 Datasheet

AON1611 MOSFET. Datasheet pdf. Equivalent

Part AON1611
Description P-Channel MOSFET
Feature AON1611 20V P-Channel MOSFET General Description Product Summary The AON1611 combines advanced tr.
Manufacture Alpha & Omega Semiconductors
Total Page 5 Pages
Datasheet
Download AON1611 Datasheet



AON1611
AON1611
20V P-Channel MOSFET
General Description
Product Summary
The AON1611 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
RDS(ON) (at VGS =-1.5V)
Typical ESD protection
-20V
-4A
< 58m
< 76m
< 98m
< 120m
HBM Class 2
DFN 1.6x1.6A
Top View
Bottom View
S
S
D
G
Pin 1
D
G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-4
-3
-16
1.8
1.15
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
Symbol
RθJA
Typ
56
88
Max
70
110
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : June 2012
www.aosmd.com
Page 1 of 5



AON1611
AON1611
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=0V, VGS=±8V
VDS=VGS, ID=-250µA
VGS=-10V, VDS=-5V
VGS=-4.5V, ID=-4A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=-2.5V, ID=-3A
VGS=-1.8V, ID=-2A
VGS=-1.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-4A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-20
-0.3
-16
-0.6
46
64.5
58
74
88
15
-0.66
-1
-5
±10
-0.9
58
80
76
98
120
-1
-2.5
V
µA
µA
V
A
m
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
550 pF
93 pF
64 pF
12
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
7 10 nC
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-4A
1 nC
Qgd Gate Drain Charge
1.8 nC
tD(on)
Turn-On DelayTime
15 ns
tr Turn-On Rise Time
VGS=-4.5V, VDS=-10V, RL=2.5,
33
ns
tD(off)
Turn-Off DelayTime
RGEN=3
50 ns
tf Turn-Off Fall Time
43 ns
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
16 ns
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
6.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : June 2012
www.aosmd.com
Page 2 of 5





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