Power MOSFET. SH8KA4 Datasheet

SH8KA4 MOSFET. Datasheet pdf. Equivalent

Part SH8KA4
Description Power MOSFET
Feature SH8KA4   30V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 21.4mΩ ±9.0A 3.0W lFeatures 1) Low.
Manufacture ROHM
Total Page 14 Pages
Datasheet
Download SH8KA4 Datasheet



SH8KA4
SH8KA4
  30V Nch+Nch Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
21.4mΩ
±9.0A
3.0W
lFeatures
1) Low on - resistance
2) Small Surface Mount Package (SOP8)
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) AEC-Q101 Qualified
lOutline
SOP8
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
lApplication
Reel size (mm)
Switching
Car Accessory (Navigation, Audio,etc)
Type Tape width (mm)
Quantity (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation (total)
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*1
PD*4
PD*5
Tj
Tstg
30
±9.0
±18
±20
8.0
4.6
3.0
2.0
1.4
150
-55 to +150
Embossed
Tape
330
12
2500
TB
SH8KA4
Unit
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.005    



SH8KA4
SH8KA4
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient (total)
                Datasheet
                       
Symbol
RthJA*4
RthJA*5
Values
Unit
Min. Typ. Max.
- - 62.5
/W
- - 89.2
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA
  ΔTj  referenced to 25
IDSS VDS = 30V, VGS = 0V
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = VGS, ID = 1mA
ΔVGS(th) ID = 1mA
  ΔTj  referenced to 25
RDS(on)*6 VGS = 10V, ID = 9.0A
VGS = 4.5V, ID = 8.0A
RG f = 1MHz, open drain
|Yfs|*6 VDS = 5V, ID = 8.0A
Values
Min. Typ. Max.
   
Unit
30 - - V
- 21 - mV/
- - 1 μA
- - ±100 nA
1.0 - 2.5 V
- -3 - mV/
- 16.5 21.4
- 22.2 28.9
- 3.4 - Ω
4.6 - - S
*1 Pw 1s, Mounted on a ceramic board (30×30×0.8mm), Limited only by maximum temperature allowed.
*2 Pw 10μs, Duty cycle 1%
*3 L 0.1mH, VDD = 15V, RG = 25Ω, Starting Tj = 25Fig.3-1,3-2
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a Cu board (40×40×0.8mm)
*6 Pulsed
                                                   
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20190527 - Rev.005





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)