Power MOSFET
R6009JND3
Nch 600V 9A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.585Ω
±9A 125W
lFeatures
1) Fast reverse recovery...
Description
R6009JND3
Nch 600V 9A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.585Ω
±9A 125W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant
lOutline
TO-252
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL1
Marking
R6009JND3
Quantity (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±9 A
Pulsed drain current
IDP*2 ±27 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 1.8 A
Avalanche energy, single pulse
EAS*3
177 mJ
Power dissipation (Tc = 25°C)
PD 125 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.002
R6009JND3
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
- - 1.00 ℃/W
- - 100 ℃...
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