Power MOSFET. R6009JND3 Datasheet

R6009JND3 MOSFET. Datasheet pdf. Equivalent

R6009JND3 Datasheet
Recommendation R6009JND3 Datasheet
Part R6009JND3
Description Power MOSFET
Feature R6009JND3; R6009JND3   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) F.
Manufacture ROHM
Datasheet
Download R6009JND3 Datasheet




ROHM R6009JND3
R6009JND3
  Nch 600V 9A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
0.585Ω
±9A
125W
lFeatures
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
lOutline
TO-252
 
 
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL1
Marking
R6009JND3
Quantity (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±9 A
Pulsed drain current
IDP*2 ±27 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 1.8 A
Avalanche energy, single pulse
EAS*3
177 mJ
Power dissipation (Tc = 25°C)
PD 125 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.002



ROHM R6009JND3
R6009JND3
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 1.00 /W
- - 100 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
600 - - V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
VDS = 600V, VGS = 0V
IDSS - - 100 μA
Tj = 25°C
IGSS VGS = ±30V, VDS = 0V - - ±100 nA
VGS(th) VDS = VGS, ID = 1.38mA 5.0 6.0 7.0 V
RDS(on)*5 VGS = 15V, ID = 4.5A
Tj = 25°C
- 0.450 0.585 Ω
RG f = 1MHz, open drain
- 2.1 - Ω
                                                                                         
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.002



ROHM R6009JND3
R6009JND3
          
                Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance
energy related
Effective output capacitance
time related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
Co(er)6
VGS = 0V
VDS = 100V
f = 1MHz
VGS = 0V
Co(tr)7
td(on)*5
tr*5
td(off)*5
tf*5
VDS = 0V to 480V
VDD 300V, VGS = 15V
ID = 4.5A
RL 68.1Ω
RG = 10Ω
Values
Min. Typ. Max.
- 645 -
- 40 -
- 1.5 -
- 32 -
- 120 -
- 20 -
- 16 -
- 38 -
- 20 -
Unit
pF
ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg*5
Qgs*5
Qgd*5
V(plateau)
VDD 300V
ID = 9A
VGS = 15V
VDD 300V, ID = 9A
Values
Min. Typ. Max.
- 22.0 -
- 6.4 -
- 8.0 -
- 9.2 -
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L 100mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C
*4 Tc=25
*5 Pulsed
*6 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising
  from 0 to 80% VDSS.
*7 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising
  from 0 to 80% VDSS.
                                                                                         
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190527 - Rev.002







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