Signal MOSFET. BSS84HZG Datasheet

BSS84HZG MOSFET. Datasheet pdf. Equivalent

Part BSS84HZG
Description Small Signal MOSFET
Feature BSS84HZG   Pch -60V -0.23A Small Signal MOSFET VDSS RDS(on)(Max.) ID PD -60V 5.3Ω ±0.23A 350mW lF.
Manufacture ROHM
Total Page 14 Pages
Datasheet
Download BSS84HZG Datasheet



BSS84HZG
BSS84HZG
  Pch -60V -0.23A Small Signal MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-60V
5.3Ω
±0.23A
350mW
lFeatures
1) Trench MOSFET technology
2) Very fast switching
3) 4.5V Drive
4) AEC-Q101 qualified
lOutline
SOT-23
SST3
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching circuits
Type Tape width (mm)
Quantity (pcs)
8
3000
High-side loadswitch
Taping code
T116
Relay driver
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
VR
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-60 V
Continuous drain current
ID
±0.23
A
Pulsed drain current
IDP*1
±0.92
A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 350 mW
PD*3 200 mW
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20191029 - Rev.002    



BSS84HZG
BSS84HZG
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 357
- - 625
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = -60V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
VGS(th) VDS = VGS, ID = -100μA
Gate threshold voltage
temperature coefficient
 ΔVGS(th)   ID = -100μA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*4 VGS = -10V, ID = -0.23A
VGS = -4.5V, ID = -0.23A
Forward Transfer
Admittance
|Yfs|*4 VDS = -10V, ID = -0.23A
Values
Unit
Min. Typ. Max.
-60 - - V
- -56.9 - mV/
- - -1 μA
- - ±10 μA
-1.0 - -2.5 V
- 2.7 - mV/
- 2.8 5.3
Ω
- 3.5 6.4
0.2 - - S
*1 Pw 10μs, Duty cycle 1%
*2 Mounted on a ceramic board (30mm×30mm×0.8mm)
*3 Mounted on a FR4 board (20mm×12mm×0.8mmCu pad=0.8m)
*4 Pulsed
                                             
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20191029 - Rev.002





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