Power MOSFET. R6009KNJ Datasheet

R6009KNJ MOSFET. Datasheet pdf. Equivalent

Part R6009KNJ
Description Power MOSFET
Feature R6009KNJ   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.535Ω ±9A 94W lFeatures 1) Low.
Manufacture ROHM
Total Page 13 Pages
Datasheet
Download R6009KNJ Datasheet



R6009KNJ
R6009KNJ
  Nch 600V 9A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
0.535Ω
±9A
94W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-263
SC-83
LPT(S)
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R6009KNJ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600 V
±9 A
±27 A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 1.4 A
Avalanche energy, single pulse
EAS*3
153 mJ
Power dissipation (Tc = 25°C)
PD 94 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150911 - Rev.001    



R6009KNJ
R6009KNJ
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA*5
Tsold
Values
Unit
Min. Typ. Max.
- - 1.3 /W
- - 80 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 2.8A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
- - 1000
- - ±100 nA
3 - 5V
   
- 0.500 0.535 Ω
- 1.00 -
- 3.0 - Ω
                                                                                         
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© 2015 ROHM Co., Ltd. All rights reserved.
2/12
20150911 - Rev.001





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