Power MOSFET. R6009KNJ Datasheet

R6009KNJ MOSFET. Datasheet pdf. Equivalent

R6009KNJ Datasheet
Recommendation R6009KNJ Datasheet
Part R6009KNJ
Description Power MOSFET
Feature R6009KNJ; R6009KNJ   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.535Ω ±9A 94W lFeatures 1) Low.
Manufacture ROHM
Datasheet
Download R6009KNJ Datasheet




ROHM R6009KNJ
R6009KNJ
  Nch 600V 9A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
0.535Ω
±9A
94W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-263
SC-83
LPT(S)
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R6009KNJ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600 V
±9 A
±27 A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 1.4 A
Avalanche energy, single pulse
EAS*3
153 mJ
Power dissipation (Tc = 25°C)
PD 94 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150911 - Rev.001    



ROHM R6009KNJ
R6009KNJ
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA*5
Tsold
Values
Unit
Min. Typ. Max.
- - 1.3 /W
- - 80 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 2.8A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
- - 1000
- - ±100 nA
3 - 5V
   
- 0.500 0.535 Ω
- 1.00 -
- 3.0 - Ω
                                                                                         
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© 2015 ROHM Co., Ltd. All rights reserved.
2/12
20150911 - Rev.001



ROHM R6009KNJ
R6009KNJ
          
                Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Forward Transfer
Admittance
|Yfs|*6 VDS = 10V, ID = 4.5A
2.3 4.5 -
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss VGS = 0V
- 540 -
Coss VDS = 25V
- 500 -
Crss f = 1MHz
- 25 -
td(on)*6 VDD 300V, VGS = 10V
-
20
-
tr*6 ID = 4.5A
- 33 -
td(off)*6 RL 66.7Ω
- 37 -
tf*6 RG = 10Ω
- 28 -
pF
ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg*6
Qgs*6
Qgd*6
V(plateau)
VDD 300V
ID = 9A
VGS = 10V
VDD 300V, ID = 9A
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L100mH, VDD=50V, RG=25Ω, STARTING Tj=25
*4 TC=25
*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)
*6 Pulsed
Values
Min. Typ. Max.
- 16.5 -
- 4.5 -
- 7.6 -
- 6.8 -
Unit
nC
V
                                                                                         
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© 2015 ROHM Co., Ltd. All rights reserved.
3/12
20150911 - Rev.001







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