Power MOSFET. R6024KNZ Datasheet

R6024KNZ MOSFET. Datasheet pdf. Equivalent

R6024KNZ Datasheet
Recommendation R6024KNZ Datasheet
Part R6024KNZ
Description Power MOSFET
Feature R6024KNZ; R6024KNZ   Nch 600V 24A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.165Ω ±24A 74W .
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Datasheet
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ROHM R6024KNZ
R6024KNZ
  Nch 600V 24A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.165Ω
±24A
74W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-3PF
 
      
lInner circuit
 
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
-
360
Taping code
C8
Marking
R6024KNZ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600 V
±24 A
±72 A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 4.1 A
Avalanche energy, single pulse
EAS*3
497 mJ
Power dissipation (Tc = 25°C)
PD 74 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150911 - Rev.001    



ROHM R6024KNZ
R6024KNZ
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 1.7 /W
- - 40 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 11.3A
RDS(on)*5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
- - 1000
- - ±100 nA
3 - 5V
   
- 0.150 0.165 Ω
- 0.32 -
- 1.9 - Ω
                                                                                         
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© 2015 ROHM Co., Ltd. All rights reserved.
2/12
20150911 - Rev.001



ROHM R6024KNZ
R6024KNZ
          
                Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Forward Transfer
Admittance
|Yfs|*5 VDS = 10V, ID = 12A
6.5 13.0 -
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*5
tr*5
td(off)*5
tf*5
VGS = 0V
VDS = 25V
f = 1MHz
VDD 300V, VGS = 10V
ID = 12A
RL 27.4Ω
RG = 10Ω
- 2000 -
- 1500 -
- 60 -
- 30 -
- 50 -
- 60 -
- 12 -
pF
ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg*5
Qgs*5
Qgd*5
V(plateau)
VDD 300V
ID = 24A
VGS = 10V
VDD 300V, ID = 24A
Values
Min. Typ. Max.
- 45 -
- 13 -
- 20 -
- 6.8 -
Unit
nC
V
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L70mH, VDD=50V, RG=25Ω, STARTING Tj=25
*4 TC=25
*5 Pulsed
                                                                                         
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© 2015 ROHM Co., Ltd. All rights reserved.
3/12
20150911 - Rev.001





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