N-Channel MOSFET. AO4264E Datasheet

AO4264E MOSFET. Datasheet pdf. Equivalent

Part AO4264E
Description N-Channel MOSFET
Feature AO4264E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RD.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4264E Datasheet



AO4264E
AO4264E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• ESD protected
Applications
• High efficiency power supply
• Secondary synchronus rectifier
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested
100% Rg Tested
60V
13.5A
< 9.8mΩ
< 13.5mΩ
HBM Class 2
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S PIN1
Orderable Part Number
Package Type
AO4264E
SO-8
D
PIN1
G
S
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy
VDS Spike G
Power Dissipation B
L=0.3mH
10µs
TA=25°C
TA=70°C
C
VGS
ID
IDM
IAS
EAS
VSPIKE
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
13.5
10.5
54
17
43
72
3.1
2.0
-55 to 150
Units
V
V
A
A
mJ
V
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Rev.1.0: May 2016
www.aosmd.com
Page 1 of 5



AO4264E
AO4264E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=60V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=13.5A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=11.5A
VDS=5V, ID=13.5A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=13.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=2.2,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=13.5A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=13.5A, di/dt=500A/µs
Min
60
1.4
0.6
Typ
1.8
8
12.5
10.5
48
0.72
1100
300
28
1.2
14.5
7
2.5
3.5
6.5
3.5
22
3
18.5
59
Max Units
1
5
±10
2.4
9.8
15.0
13.5
1
4
V
µA
µA
V
mΩ
mΩ
S
V
A
pF
pF
pF
2.0 Ω
25 nC
13 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.10.: May 2016
www.aosmd.com
Page 2 of 5





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