AO4264E

AO4264E 60V N-Channel AlphaSGT TM General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge ESD protected Applications High efficiency power supply Secondary synchronus rectifier Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 13.5A < 9.8mΩ < 13.5mΩ HBM Class 2 Top View D D D D SOIC-8 Bottom View G S S S PIN1 Orderable Part Number Package Type AO4264E SO-8 D PIN1 G S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike G Power Dissipation B L=0.3mH 10µs TA=25°C TA=70°C C VGS ID IDM IAS EAS VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 13.5 10.5 54 17 43 72 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: May 2016 www.aosmd.com Page 1 of 5 AO4264E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V ...