N-Channel MOSFET
AON6262E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Ch...
Description
AON6262E
60V N-Channel AlphaSGT TM
General Description
Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge ESD protected
Applications
High efficiency power supply Secondary synchronus rectifier
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested 100% Rg Tested
60V 40A < 6.2mΩ < 8.5mΩ
HBM Class 2
Top View
DFN5x6 Bottom View
Top View
D
PIN1
PIN1
1 2 3 4
8
7
G
6
5
S
Orderable Part Number
AON6262E
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy VDS Spike I
Power Dissipation B
L=0.3mH 10µs TC=25°C TC=100°C
C
IDSM
IAS EAS VSPIKE
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 40 40 145 23.5 18.5 23 79 72 48 19 6.2 4.0
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 15 40 2.1
Max 20 50 2.6
Units °C/W °C/W °C/W
Rev.1.0: January 2016
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AON6262E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Param...
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