N-Channel MOSFET. AOT292L Datasheet

AOT292L MOSFET. Datasheet pdf. Equivalent

Part AOT292L
Description N-Channel MOSFET
Feature AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM t.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOT292L Datasheet



AOT292L
AOT292L/AOB292L/AOTF292L
100V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• RoHS and Halogen Free Compliant
Applications
• Synchronous Rectification for power supply
• Ideal for boost converters
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D
100V
105A
< 4.5mΩ
< 5.3mΩ
(< 4.1m)
(< 4.9m)
D
AOT292L
G D S AOTF292L
G DS
AOB292L G
S
G
S
Orderable Part Number
AOT292L
AOTF292L
AOB292L
Package Type
TO-220
TO-220F
TO-263
Form
Tube
Tube
Tape & Reel
Minimum Order Quantity
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT(B)292L
AOTF292L
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain
TC=25°C
Current G**
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
C
VGS
ID
IDM
IDSM
IAS
EAS
±20
105 70
82 50
420
14.5
11.5
60
180
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
120
300 47
150 23
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT(B)292L
AOTF292L
15
60
0.5 3.2
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
** Package limited for TO220 & TO263
Rev.2.0: March 2016
www.aosmd.com
Page 1 of 7



AOT292L
AOT292L/AOB292L/AOTF292L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
TO220/TO220F
TJ=55°C
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=6V, ID=20A
TO220/TO220F
VGS=10V, ID=20A
TO263
VGS=6V, ID=20A
TO263
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current(TO220/TO263) G
Maximum Body-Diode Continuous Current(TO220F)
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=50V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min
100
2.3
0.4
Typ
2.8
3.7
6.1
4.2
3.3
3.8
90
0.68
6775
557
32
0.8
90
40
24
13.5
20
11.5
48
10
50
380
Max Units
1
5
±100
3.4
4.5
7.4
V
µA
nA
V
mΩ
5.3 mΩ
4.1 mΩ
4.9 mΩ
S
1V
105 A
50 A
pF
pF
pF
1.2 Ω
126 nC
60 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2016
www.aosmd.com
Page 2 of 7





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