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AOB292L Dataheets PDF



Part Number AOB292L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOB292L DatasheetAOB292L Datasheet (PDF)

AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • RoHS and Halogen Free Compliant Applications • Synchronous Rectification for power supply • Ideal for boost converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D 100V 105A < 4.5mΩ < 5.3mΩ (< 4.1mW*) (< 4.9mW*) D G AOT292L DS G AOTF292L G DS S AOB292L G S Orde.

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AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • RoHS and Halogen Free Compliant Applications • Synchronous Rectification for power supply • Ideal for boost converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D 100V 105A < 4.5mΩ < 5.3mΩ (< 4.1mW*) (< 4.9mW*) D G AOT292L DS G AOTF292L G DS S AOB292L G S Orderable Part Number AOT292L AOTF292L AOB292L Package Type TO-220 TO-220F TO-263 Form Tube Tube Tape & Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)292L AOTF292L Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain TC=25°C Current G** TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD ±20 105 70 82 50 420 14.5 11.5 60 180 120 300 47 150 23 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC AOT(B)292L AOTF292L 15 60 0.5 3.2 Units °C/W °C/W °C/W * Surface mount package TO263 ** Package limited for TO220 & TO263 Rev.3.0: August 2020 www.aosmd.com Page 1 of 7 AOT292L/AOB292L/AOTF292L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID=250μA, VGS=0V VDS=100V, VGS=0V VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A 100 TJ=55°C 2.3 TO220/TO220F TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A TO220/TO220F VGS=10V, ID=20A TO263 VGS=6V, ID=20A TO263 gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current(TO220/TO263) G Maximum Body-Diode Continuous Current(TO220F) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz 0.4 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=50V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=50V, RL=2.5W, RGEN=3W tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms Typ 2.8 3.7 6.1 4.2 3.3 3.8 90 0.68 6775 557 32 0.8 90 40 24 13.5 20 11.5 48 10 50 380 Max Units V 1 μA 5 ±100 nA 3.4 V 4.5 mΩ 7.4 5.3 mΩ 4.1 mΩ 4.9 mΩ S 1 V 105 A 50 A pF pF pF 1.2 Ω 126 nC 60 nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. I. L=100uH, Fsw=1Hz, Tj≤150C by repetitive UIS. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS.


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