AO3416L

Rev 2: Nov 2004 AO3416, AO3416L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 6.5 5.2 30 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 65 85 43 Max 90 125 60 Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3416. AO3416L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=16V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-B...