P-Channel MOSFET. AO3487 Datasheet

AO3487 MOSFET. Datasheet pdf. Equivalent

Part AO3487
Description P-Channel MOSFET
Feature AO3487 30V P-Channel MOSFET General Description • The AO3487 uses advanced trench technology to pro.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO3487 Datasheet



AO3487
AO3487
30V P-Channel MOSFET
General Description
• The AO3487 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
-30V
-4.3A
< 48m
< 78m
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Orderable Part Number
AO3487
Package Type
SOT23
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±20
-4.3
-3.5
-25
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
Units
90 °C/W
125 °C/W
80 °C/W
Rev.1.0: April 2016
www.aosmd.com
Page 1 of 5



AO3487
AO3487
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, ID=-4.3A
Forward Transconductance
Diode Forward Voltage
VGS=-4.5V, ID=-3A
VDS=-5V, ID=-4.3A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-30
-1.4
V
-1
µA
-5
±100 nA
-1.9 -2.4 V
34 48
m
52 68
54 78 m
10 S
-0.7 -1
V
-2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
520 pF
100 pF
65 pF
3.5 7.5 11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2 15 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-4.3A
4.6 8 nC
1.6 nC
Qgd Gate Drain Charge
2.2 nC
tD(on)
Turn-On DelayTime
7.5 ns
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.5,
5.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
19 ns
tf Turn-Off Fall Time
7 ns
trr Body Diode Reverse Recovery Time IF=-4.3A, dI/dt=100A/µs
11 ns
Qrr Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µs
5.3 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2016
www.aosmd.com
Page 2 of 5





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