Power Transistor. 2SAR514PFRA Datasheet

2SAR514PFRA Transistor. Datasheet pdf. Equivalent

Part 2SAR514PFRA
Description Middle Power Transistor
Feature 2SAR514P FRA Middle Power Transistor (-80V / -0.7A) Parameter VCEO IC Value -80V -0.7A lFeatures .
Manufacture ROHM
Datasheet
Download 2SAR514PFRA Datasheet



2SAR514PFRA
2SAR514P FRA
Middle Power Transistor (-80V / -0.7A)
Parameter
VCEO
IC
Value
-80V
-0.7A
lFeatures
1)Low saturation voltage
 VCE(sat) =-400mV (Max.)
  (IC/ IB=-300mA/-15mA)
2)High speed switching
lOutline
  SOT-89
  SC-62
MPT3
lInner circuit
Datasheet
AEC-Q101 Qualified
 
 
 
 
 
lApplication
LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
lPackaging specifications
Part No.
Package
2SAR514P FRA
SOT-89
(MPT3)
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
4540 T100 180
12
1000
MD
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/6
20160920 - Rev.001



2SAR514PFRA
2SAR514P FRA
          
                Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
PD*3
Tj
Tstg
Values
-80
-80
-6
-0.7
-1.4
0.5
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
W
lElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
Conditions
BVCBO IC = -100μA
BVCEO IC = -1mA
BVEBO IE = -100μA
ICBO VCB = -80V
IEBO VEB = -4V
VCE(sat) IC = -300mA, IB = -15mA
hFE VCE = -3V, IC = -100mA
fT
VCE = -10V, IE = 200mA,
f = 100MHz
Cob
VCB = -10V, IE = 0A,
f = 1MHz
Min.
-80
-80
-6
-
-
-
120
-
-
Values
Typ.
-
-
-
-
-
-200
-
380
10
Max.
-
-
-
-1.0
-1.0
-400
390
-
-
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Turn-On time
Storage time
Fall time
ton IC = -350mA,
IB1 = -35mA,
tstg
IB2 = 35mA,
VCC -10V,
tf
RL = 27Ω
See test circuit
- 50 -
- 350 -
- 50 -
                                        
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
                              
ns
ns
ns
                                            
 
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© 2016 ROHM Co., Ltd. All rights reserved.
2/6
                                        
20160920 - Rev.001





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