Digital Transistor. DTA143EKAFRA Datasheet

DTA143EKAFRA Transistor. Datasheet pdf. Equivalent

Part DTA143EKAFRA
Description Digital Transistor
Feature NotNeRewcDoemsimgennsded for DTA143EKA FRA PNP -100mA -50V Digital Transistor (Bias Resistor Built.
Manufacture ROHM
Datasheet
Download DTA143EKAFRA Datasheet



DTA143EKAFRA
DTA143EKA FRA
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
AEC-Q101 Qualified
Parameter
VCC
IC(MAX.)
R1
R2
Value
-50V
-100mA
4.7kΩ
4.7kΩ
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary NPN Types: DTC143EKA FRA
lOutline
SOT-346
 
SC-59
 
 
 
  
(SMT3)
 
              
lInner circuit
lApplication
INVERTER,INTERFACE,DRIVER
lPackaging specifications
Part No.
Package
Package
size
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTA143EKA FRA SOT-346
(SMT3)
2928
T146
180
8
3000
13
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
20160316 - Rev.001



DTA143EKAFRA
DTA143EKA FRA
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCC
VIN
IO
IC(MAX)*1
PD*2
Tj
Tstg
Values
-50
-30 to 10
-100
-100
200
150
-55 to +150
Unit
V
V
mA
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO = -10mA, II = -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -10mA
-
-
Values
Min. Typ. Max.
- - -0.5
-3.0 -
-
- -100 -300
- - -1.8
- - -500
30 -
-
3.29 4.7 6.11
0.8 1.0 1.2
Unit
V
mV
mA
nA
-
-
Transition frequency
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
                                            
 
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
                                        
20160316 - Rev.001





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