N-Channel MOSFET. AOD2910E Datasheet

AOD2910E MOSFET. Datasheet pdf. Equivalent

Part AOD2910E
Description N-Channel MOSFET
Feature AOD2910E 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOD2910E Datasheet



AOD2910E
AOD2910E
100V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• ESD protected
• Optimized for fast-switching applications
Applications
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested
100% Rg Tested
100V
37A
< 23mΩ
< 33mΩ
HBM Class 2
Top View
TO252
DPAK
Bottom View
D
D
D
G
Orderable Part Number
AOD2910E
S
G
G
S
S
Package Type
TO-252
Form
Tape & Reel
Minimum Order Quantity
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
VDS Spike
Power Dissipation B
Power Dissipation A
10µs
TC=25°C
TC=100°C
TA=25°C
TA=70°C
C
VDS
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
37
26
70
11
9
14
10
120
71.5
35.5
6.2
4.0
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
40
1.7
Max
20
50
2.1
Units
°C/W
°C/W
°C/W
Rev.1.0: September 2015
www.aosmd.com
Page 1 of 6



AOD2910E
AOD2910E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=16A
VDS=5V, ID=20A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min
100
1.6
0.5
Typ
2.15
18.5
33
23.5
40
0.72
1200
93
6.3
1.0
16.5
8
3.5
2.5
6
3
22
3
25
120
Max Units
V
1
µA
5
±10 µA
2.7 V
23
mΩ
42
33 mΩ
S
1V
37 A
pF
pF
pF
1.5 Ω
25 nC
14 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2015
www.aosmd.com
Page 2 of 6





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