AOD2910E

AOD2910E 100V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge ESD protected Optimized for fast-switching applications Applications Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 100V 37A < 23mΩ < 33mΩ HBM Class 2 Top View TO252 DPAK Bottom View D D D G Orderable Part Number AOD2910E S G G S S Package Type TO-252 Form Tape & Reel Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH VDS Spike Power Dissipation B Power Dissipation A 10µs TC=25°C TC=100°C TA=25°C TA=70°C C VDS VGS ID IDM IDSM IAS EAS VSPIKE PD PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 37 26 70 11 9 14 10 120 71.5 35.5 6.2 4.0 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 1.7 Max 20 50 2.1 Units °C/W °C/W °C/W Rev.1.0: September 2015 www.aosmd.com Page 1 of 6 AOD2910E Electrical Characteristi...