AON7230

AON7230 100V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Logic level driven Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 47A < 11.5mΩ < 15.5mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Synchronous Rectification in cell phone Quick Charger 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Bottom View Pin 1 Pin 1 Orderable Part Number AON7230 Package Type DFN 3.3x3.3 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Top View 18 27 36 45 Form Tape & Reel D G S Minimum Order Quantity 3000 Maximum 100 ±20 47 30 125 13 10 33 54 120 54 21 4.1 2.6 -55 to 150 Units V V A A A mJ V W W °C Typ Max 25 30 50 60 1.8 2.3 Units °C/W °C/W °C/W Rev.1.0: October 2015 www.aosmd.com Page 1 of 6 AON7230 Electrical Characteristics (TJ=25°C unless otherwise noted...