N-Channel MOSFET. AON7230 Datasheet

AON7230 MOSFET. Datasheet pdf. Equivalent

Part AON7230
Description N-Channel MOSFET
Feature AON7230 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON).
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON7230 Datasheet



AON7230
AON7230
100V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Logic level driven
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100V
47A
< 11.5mΩ
< 15.5mΩ
Applications
• Synchronous Rectification in DC/DC and AC/DC Converters
• Synchronous Rectification in cell phone Quick Charger
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3
Top View
Bottom View
Pin 1
Pin 1
Orderable Part Number
AON7230
Package Type
DFN 3.3x3.3
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH
C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Top View
18
27
36
45
Form
Tape & Reel
D
G
S
Minimum Order Quantity
3000
Maximum
100
±20
47
30
125
13
10
33
54
120
54
21
4.1
2.6
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Typ Max
25 30
50 60
1.8 2.3
Units
°C/W
°C/W
°C/W
Rev.1.0: October 2015
www.aosmd.com
Page 1 of 6



AON7230
AON7230
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=13A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=11A
VDS=5V, ID=13A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=13A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=3.85,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=13A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=13A, di/dt=500A/µs
Min
100
1.5
0.7
Typ
1.95
9.5
18
12
55
0.7
2320
175
11
1.4
30
13
7
3
8
4
27
5
25
120
Max Units
1
5
±100
2.5
11.5
22
15.5
1
47
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
2.1 Ω
45 nC
21 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2015
www.aosmd.com
Page 2 of 6





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